Manufacturable multi-emitter laser diode

ABSTRACT

A multi-emitter laser diode device includes a carrier chip singulated from a carrier wafer. The carrier chip has a length and a width, and the width defines a first pitch. The device also includes a plurality of epitaxial mesa dice regions transferred to the carrier chip from a substrate and attached to the carrier chip at a bond region. Each of the epitaxial mesa dice regions is arranged on the carrier chip in a substantially parallel configuration and positioned at a second pitch defining the distance between adjacent epitaxial mesa dice regions. Each of the plurality of epitaxial mesa dice regions includes epitaxial material, which includes an n-type cladding region, an active region having at least one active layer region, and a p-type cladding region. The device also includes one or more laser diode stripe regions, each of which has a pair of facets forming a cavity region.

CROSS-REFERENCES TO RELATED APPLICATIONS

The present application is a divisional of U.S. application Ser. No.14/600,506, filed Jan. 20, 2015, which is a continuation-in-part of U.S.application Ser. No. 14/312,427, filed Jun. 23, 2014, which is acontinuation-in-part of U.S. application Ser. No. 14/176,403, filed Feb.10, 2014, all of which are incorporated herein by reference in theirentirety for all purposes.

BACKGROUND

In 1960, the laser was first demonstrated by Theodore H. Maiman atHughes Research Laboratories in Malibu. This laser utilized asolid-state flash lamp-pumped synthetic ruby crystal to produce redlaser light at 694 nm. By 1964, blue and green laser output wasdemonstrated by William Bridges at Hughes Aircraft utilizing a gas laserdesign called an Argon ion laser. The Ar-ion laser utilized a noble gasas the active medium and produced laser light output in the UV, blue,and green wavelengths including 351 nm, 454.6 nm, 457.9 nm, 465.8 nm,476.5 nm, 488.0 nm, 496.5 nm, 501.7 nm, 514.5 nm, and 528.7 nm. TheAr-ion laser had the benefit of producing highly directional andfocusable light with a narrow spectral output, but the wall plugefficiency was <0.1%, and the size, weight, and cost of the lasers wereundesirable as well.

As laser technology evolved, more efficient lamp pumped solid statelaser designs were developed for the red and infrared wavelengths, butthese technologies remained a challenge for blue and green lasers. As aresult, lamp pumped solid state lasers were developed in the infrared,and the output wavelength was converted to the visible using specialtycrystals with nonlinear optical properties. A green lamp pumped solidstate laser had 3 stages: electricity powers lamp, lamp excites gaincrystal which lases at 1064 nm, 1064 nm goes into frequency conversioncrystal which converts to visible 532 nm. The resulting green and bluelasers were called “lamped pumped solid state lasers with secondharmonic generation” (LPSS with SHG) had wall plug efficiency of ˜1%,and were more efficient than Ar-ion gas lasers, but were still tooinefficient, large, expensive, fragile for broad deployment outside ofspecialty scientific and medical applications. Additionally, the gaincrystal used in the solid state lasers typically had energy storageproperties which made the lasers difficult to modulate at high speedswhich limited its broader deployment.

To improve the efficiency of these visible lasers, high power diode (orsemiconductor) lasers were utilized. These “diode pumped solid statelasers with SHG” (DPSS with SHG) had 3 stages: electricity powers 808 nmdiode laser, 808 nm excites gain crystal, which lases at 1064 nm, 1064nm goes into frequency conversion crystal which converts to visible 532nm. The DPSS laser technology extended the life and improved the wallplug efficiency of the LPSS lasers to 5-10%, and furthercommercialization ensued into more high-end specialty industrial,medical, and scientific applications. However, the change to diodepumping increased the system cost and required precise temperaturecontrols, leaving the laser with substantial size and power consumptionwhile not addressing the energy storage properties which made the lasersdifficult to modulate at high speeds.

As high power laser diodes evolved and new specialty SHG crystals weredeveloped, it became possible to directly convert the output of theinfrared diode laser to produce blue and green laser light output. These“directly doubled diode lasers” or SHG diode lasers had 2 stages:electricity powers 1064 nm semiconductor laser, 1064 nm goes intofrequency conversion crystal which converts to visible 532 nm greenlight. These lasers designs are meant to improve the efficiency, costand size compared to DPSS-SHG lasers, but the specialty diodes andcrystals required make this challenging today. Additionally, while thediode-SHG lasers have the benefit of being directly modulate-able, theysuffer from severe sensitivity to temperature which limits theirapplication.

Currently the only viable direct blue and green laser diode structuresare fabricated from the wurtzite AlGaInN material system. Themanufacturing of light emitting diodes from GaN related materials isdominated by the heteroeptiaxial growth of GaN on foreign substratessuch as Si, SiC and sapphire. Laser diode devices operate at such highcurrent densities that the crystalline defects associated withheteroepitaxial growth are not acceptable. Because of this, very lowdefect-density, free-standing GaN substrates have become the substrateof choice for GaN laser diode manufacturing. Unfortunately, suchsubstrates are costly and inefficient.

SUMMARY

Embodiments of the invention provide methods for fabricatingsemiconductor laser diodes. Typically these devices are fabricated usingan epitaxial deposition, followed by processing steps on the epitaxialsubstrate and overlying epitaxial material. What follows is a generaldescription of the typical configuration and fabrication of thesedevices.

In an example, the present invention provides a method for manufacturinga gallium and nitrogen containing laser diode device with low cost. Themethod includes providing a gallium and nitrogen containing substratehaving a surface region and forming epitaxial material overlying thesurface region, the epitaxial material comprising an n-type claddingregion, an active region comprising at least one active layer overlyingthe n-type cladding region, and a p-type cladding region overlying theactive region. The method includes patterning the epitaxial material toform a plurality of dice, each of the dice corresponding to at least onelaser device, characterized by a first pitch between a pair of dice, thefirst pitch being less than a design width. The method includestransferring each of the plurality of dice to a carrier wafer such thateach pair of dice is configured with a second pitch between each pair ofdice, the second pitch being larger than the first pitch correspondingto the design width. The method includes singulating the carrier waferinto a plurality of laser diode devices on carrier chips. The carrierchips effectively serve as the submount of the laser diode device andcan be integrated directly into a wide variety of package types.

In an example, using basic assumptions about processing and materialcosts, it can be shown that blue-light emitting, GaN-based laser devicecosts below $0.50 per optical Watt and could be as low as $0.10 peroptical Watt by transferring die from 4.5 cm² GaN substrates to 200 mmSiC carriers. This price is highly competitive with state of the artlight emitting diodes and could enable widespread penetration of laserlight sources into markets currently served by LEDs such as generallighting.

In an example, the present die configured with carrier, which can serveas a submount, can be packaged into a module without any further liftoffprocess or the like. The process is efficient and uses conventionalprocess technology. Depending upon the embodiment, these and otherbenefits may be achieved.

The present invention achieves these benefits and others in the contextof known process technology. However, a further understanding of thenature and advantages of the present invention may be realized byreference to the latter portions of the specification and attacheddrawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a simplified illustration of a laser diode according to anexample of the present invention.

FIGS. 2a-2b are simplified illustrations of a die expanded laser diodeaccording to an example of the present invention.

FIG. 3a is a schematic diagram of a c-plane polar laser diode with thecavity aligned in the m-direction with cleaved or etched mirrors in anexample.

FIG. 3b is a schematic diagram of a semipolar laser diode with thecavity aligned in the projection of c-direction with cleaved or etchedmirrors in an example.

FIG. 4 is a schematic cross-section of ridge laser diode in an example.

FIG. 5 is a top view of a selective area bonding process in an example.

FIG. 6 is a simplified process flow for epitaxial preparation in anexample.

FIG. 7 is a simplified side view illustration of selective area bondingin an example.

FIG. 8 is a simplified process flow of epitaxial preparation with activeregion protection in an example.

FIG. 9 is a simplified process flow of epitaxial preparation with activeregion protection and with ridge formation before bonding in an example.

FIG. 10a is a simplified illustration of anchored PEC undercut(top-view) in an example.

FIG. 10b is a simplified illustration of anchored PEC undercut(side-view) in an example.

FIG. 11a is top view of transferrable mesa with metal anchors in anexample.

FIG. 11b is a cross sectional view of metal anchor in an example.

FIG. 11c is a schematic of electrical circuit formed during PEC etchingwith metal anchors in an example.

FIG. 12 is a simplified illustration of a carrier wafer processed to actas a submount in an example.

FIG. 13 is top view of a selective area bonding process with dieexpansion in two dimensions in an example.

FIG. 14 is a flow diagram for processing steps and material inputs for atypical laser diode device in an example.

FIG. 15 is a flow diagram for processing steps and material inputs for alow cost laser device fabricated with epitaxial transfer to a carrierwafer in an example.

FIG. 16 is a table showing number of laser devices that can be processedon a substrate at a given die pitch in an example.

FIG. 17 is an illustration of bondable area for various substratedimensions on a 100 mm diameter carrier wafer in an example.

FIG. 18 is a table showing number of laser devices that can be processedon 50 micron wide die after epi transfer to a carrier in an example.

FIG. 19 is a diagram showing the process flow for fabrication of a smallarea GaN substrate into a chip scale package in an example.

FIG. 20 is a schematic comparing a typical laser die fabricated from aGaN wafer to a laser device fabricated on a transferred laser die andsingulated from a carrier wafer in an example.

FIG. 21 shows the schematic representation of an epitaxial structure foran embodiment of this invention where an otherwise conventionalepitaxial design for a c-plane laser incorporates both a sacrificiallayer and a n-contact layer, which facilitate transfer of the epitaxialdevice layers in accordance with this invention as well as makingelectoral contact to the exposed n-side surface of the transferreddevice.

FIG. 22 shows the schematic representation of an epitaxial structure foran embodiment of this invention where the transferred epitaxial devicelayers are intended to be clad on both sides with a transparentconductive oxide.

FIG. 23 schematic representation of epitaxial structures for aconventional c-plane laser diode utilizing AlGaN cladding and an examplewhere thin epitaxial structures are transferred from the originalsubstrate and non-epitaxial, low-refractive-index cladding is applied toboth sides of the cavity by depositing transparent conducting oxidelayers.

FIG. 24 shows a plot of confinement factors for a TCO clad c-plane lasersimulated using a commercially available optical mode solving softwarepackage in an example. The dashed line corresponds to the confinementfactor found in a conventional c-plane laser diode structure. Both theTCO clad and c-plane data correspond to the structures shown in FIG. 1.Other embodiments include nonpolar or semipolar orientations.

FIG. 25 is an example schematic cross section of laser waveguide withdouble conductive oxide cladding showing ridge formation in n-typegallium and nitrogen containing material such as GaN.

FIG. 26 is an example schematic cross section of laser waveguide withdouble conductive oxide cladding showing ridge formation in p-typegallium and nitrogen containing material such as GaN.

FIG. 27 is an example schematic cross section of laser waveguide withdouble conductive oxide cladding showing ridge formation in n-type andin p-type gallium and nitrogen containing material such as GaN.

FIG. 28 is an example illustrating a ridge formed from TCO.

FIG. 29 shows the standard approach for manufacturing monolithicallyintegrated multiple-emitter stripe laser devices, often referred to aslaser bars.

FIG. 30 is a schematic cross-section of one embodiment of a multipleemitter laser device according to this invention wherein the laserstripes are electrically connected in parallel.

FIG. 31 shows a top-view schematic of the embodiment of a multipleemitter laser device shown in FIG. 30 according to this invention.

FIG. 32 is a schematic cross-section of an embodiment of a multipleemitter laser device according to this invention wherein the laserstripes are electrically connected in series.

FIG. 33 is a schematic cross-section of an embodiment of a multipleemitter laser device according to this invention wherein the laserstripes are electrically individually addressable.

FIG. 34 shows a top-view schematic of the embodiment of a multipleemitter laser device shown in FIG. 33 according to this invention.

FIG. 35 shows schematic of electrical equivalent circuits for the threeembodiments of multiple emitter laser device shown in FIG. 31, FIG. 32,and FIG. 33 according to this invention.

FIG. 36 schematically illustrates the geometrical relationship betweenthe individual laser stripes on the epitaxial wafer prior to transfer tothe carrier wafer according to this invention.

FIG. 37 is a simplified top view of a selective area bonding process andillustrates a die expansion process via selective areas bonding,resulting in a multiple-emitter laser device according to thisinvention.

FIG. 38 schematically illustrates one embodiment of this invention formultiple emitter laser devices have emitters spaced closely enough toshare common optical components according to this invention.

FIG. 39 shows a top view example embodiment illustrating amultiple-emitter laser device making use of a single optical elementaccording to this invention.

FIG. 40 is a drawing of a RGB laser chip according to an embodiment ofthis invention.

FIG. 41 is a drawing of a RGB laser chip according to an embodiment ofthis invention.

FIG. 42 is a schematic diagram of the process for bonding dice frommultiple epitaxial wafers to the same carrier wafer according to anembodiment of this invention.

FIG. 43 is a schematic diagram of the process for bonding dice frommultiple epitaxial wafers to the same carrier wafer according to anembodiment of this invention.

FIG. 44 shows schematic diagrams of layouts for laser chips containingmultiple die which will be individually addressable according toembodiments of this invention.

FIG. 45 shows schematic diagrams of the layout for laser chips includingmetallic through vias containing multiple die which will be individuallyaddressable according to an embodiment of this invention.

FIG. 46 shows schematic diagrams of the layout for laser chipscontaining multiple die which will be individually addressable accordingto embodiments of this invention.

FIG. 47 schematically depicts the energy conversion efficiency and inputpower density for GaN-based Light Emitting Diodes (LEDs) and LaserDiodes (LD) in an example.

FIG. 48 schematically depicts an example of the present invention.

FIG. 49 schematically depicts an alternative example of the presentinvention.

FIG. 50 schematically depicts an alternative example of the presentinvention.

FIG. 51 is a schematic cross-sectional view of the integrated, low-costlaser-based light module in an example.

FIG. 52 schematically depicts an example where the light from the one ormore blue laser.

FIG. 53 schematically depicts an alternative of the integrated, low-costlaser-based light module in an alternative example of the presentinvention.

FIG. 54 schematically depicts an integrated lighting apparatus in anexample of the present invention.

DETAILED DESCRIPTION

Embodiments of the invention provide methods for fabricatingsemiconductor laser diodes. Typically these devices are fabricated usingan epitaxial deposition, followed by processing steps on the epitaxialsubstrate and overlying epitaxial material. What follows is a generaldescription of the typical configuration and fabrication of thesedevices.

Reference can be made to the following description of the drawings, asprovided below.

FIG. 1 is a side view illustration of a state of the art GaN based laserdiode after processing. Laser diodes are fabricated on an originalgallium and nitrogen containing epitaxial substrate 100, typically withepitaxial n-GaN and n-side cladding layers 101, active region 102, p-GaNand p-side cladding 103, insulating layers 104 and contact/pad layers105. Laser die pitch is labeled. All epitaxy material not directly underthe laser ridge is wasted in this device design. In an example, n-typecladding may be comprised of GaN, AlGaN, or InAlGaN.

FIGS. 2a-2b are side view illustrations of a gallium and nitrogencontaining epitaxial wafer 100 before the die expansion process andcarrier wafer 106 after the die expansion process. This figuredemonstrates a roughly five times expansion and thus five timesimprovement in the number of laser diodes, which can be fabricated froma single gallium and nitrogen containing substrate and overlyingepitaxial material. Typical epitaxial and processing layers are includedfor example purposes and include n-GaN and n-side cladding layers 101,active region 102, p-GaN and p-side cladding 103, insulating layers 104,and contact/pad layers 105. Additionally, a sacrificial region 107 andbonding material 108 are used during the die expansion process.

FIG. 3a is a schematic diagram of c-plane polar laser diode with thecavity aligned in the m-direction with cleaved or etched mirrors. Shownis a simplified schematic diagram of c-plane laser diode with the cavityaligned in the m-direction with cleaved or etched mirrors. The laserstripe region is characterized by a cavity orientation substantially ina projection of a m-direction, which is substantially normal to ana-direction. The laser strip region has a first end 107 and a second end109 and is formed on an m-direction on a (0001) c-plane gallium andnitrogen containing substrate having a pair of cleaved mirrorstructures, which face each other.

FIG. 3b is a schematic diagram of semipolar laser diode with the cavityaligned in the projection of c-direction with cleaved or etched mirrors.Shown is a simplified schematic diagram of semipolar laser diode withthe cavity aligned in the projection of c-direction with cleaved oretched mirrors. The laser stripe region is characterized by a cavityorientation substantially in a projection of a c-direction, which issubstantially normal to an a-direction. The laser strip region has afirst end 107 and a second end 109 and is formed on a projection of ac-direction on a semipolar gallium and nitrogen containing substratehaving a pair of cleaved mirror structures, which face each other. Inexamples, the semipolar orientation may be comprised of a {50-51},{30-31}, {20-21}, {30-32}, {50-5-1}, {30-3-1}, {20-2-1}, or a {30-3-2}orientation, or at an offcut of these orientations within +/−10 degreestoward a c-direction and/or an a-direction. In other embodiments thegallium and nitrogen containing substrate may be a nonpolar substratesuch as an m-plane substrate.

FIG. 4 is a Schematic cross-section of ridge laser diode in an example,and shows a simplified schematic cross-sectional diagram illustrating astate of the art laser diode structure. This diagram is merely anexample, which should not unduly limit the scope of the claims herein.As shown, the laser device includes gallium nitride substrate 203, whichhas an underlying n-type metal back contact region 201. In anembodiment, the metal back contact region is made of a suitable materialsuch as those noted below and others. In an embodiment, the device alsohas an overlying n-type gallium nitride layer 205, an active region 207,and an overlying p-type gallium nitride layer structured as a laserstripe region 211. Additionally, the device may also include an n-sideseparate confinement hetereostructure (SCH), p-side guiding layer orSCH, p-AlGaN EBL, among other features. In an embodiment, the devicealso has a p++ type gallium nitride material 213 to form a contactregion.

FIG. 5 is a simplified top view of a selective area bonding process andillustrates a die expansion process via selective area bonding. Theoriginal gallium and nitrogen containing epitaxial wafer 201 has hadindividual die of epitaxial material and release layers defined throughprocessing. Individual epitaxial material die are labeled 202 and arespaced at pitch 1. A round carrier wafer 200 has been prepared withpatterned bonding pads 203. These bonding pads are spaced at pitch 2,which is an even multiple of pitch 1 such that selected sets ofepitaxial die can be bonded in each iteration of the selective areabonding process. The selective area bonding process iterations continueuntil all epitaxial die have been transferred to the carrier wafer 204.The gallium and nitrogen containing epitaxy substrate 201 can nowoptionally be prepared for reuse.

In an example, FIG. 6 is a simplified diagram of process flow forepitaxial preparation including a side view illustration of an exampleepitaxy preparation process flow for the die expansion process. Thegallium and nitrogen containing epitaxy substrate 100 and overlyingepitaxial material are defined into individual die, bonding material 108is deposited, and sacrificial regions 107 are undercut. Typicalepitaxial layers are included for example purposes and are n-GaN andn-side cladding layers 101, active region 102, and p-GaN and p-sidecladding 103.

In an example, FIG. 7 is a simplified illustration of a side view of aselective area bonding process in an example. Prepared gallium andnitrogen containing epitaxial wafer 100 and prepared carrier wafer 106are the starting components of this process. The first selective areabonding iteration transfers a fraction of the epitaxial die, withadditional iterations repeated as needed to transfer all epitaxial die.Once the die expansion process is completed, state of the art laserprocessing can continue on the carrier wafer. Typical epitaxial andprocessing layers are included for example purposes and are n-GaN andn-side cladding layers 101, active region 102, p-GaN and p-side cladding103, insulating layers 104 and contact/pad layers 105. Additionally, asacrificial region 107 and bonding material 108 are used during the dieexpansion process.

In an example, FIG. 8 is a simplified diagram of an epitaxy preparationprocess with active region protection. Shown is a side view illustrationof an alternative epitaxial wafer preparation process flow during whichsidewall passivation is used to protect the active region during any PECundercut etch steps. This process flow allows for a wider selection ofsacrificial region materials and compositions. Typical substrate,epitaxial, and processing layers are included for example purposes andare the gallium and nitrogen containing substrate 100, n-GaN and n-sidecladding layers 101, active region 102, p-GaN and p-side cladding 103,insulating layers 104 and contact/pad layers 105. Additionally, asacrificial region 107 and bonding material 108 are used during the dieexpansion process.

In an example, FIG. 9 is a simplified diagram of epitaxy preparationprocess flow with active region protection and ridge formation beforebonding. Shown is a side view illustration of an alternative epitaxialwafer preparation process flow during which sidewall passivation is usedto protect the active region during any PEC undercut etch steps andlaser ridges are defined on the denser epitaxial wafer before transfer.This process flow potentially allows cost saving by performingadditional processing steps on the denser epitaxial wafer. Typicalsubstrate, epitaxial, and processing layers are included for examplepurposes and are the gallium and nitrogen containing substrate 100,n-GaN and n-side cladding layers 101, active region 102, p-GaN andp-side cladding 103, insulating layers 104 and contact/pad layers 105.Additionally, a sacrificial region 107 and bonding material 108 are usedduring the die expansion process. FIG. 9 also shows laser diode striperegions 901 formed in a top portion of the plurality of epitaxial mesadice regions 903.

FIG. 10a is a simplified example of anchored PEC undercut (top-view).Shown is a top view of an alternative release process during theselective area bonding of narrow mesas. In this embodiment a top downetch is used to etch away the area 300, followed by the deposition ofbonding metal 303. A PEC etch is then used to undercut the region 301,which is wider than the lateral etch distance of the sacrificial layer.The sacrificial region 302 remains intact and serves as a mechanicalsupport during the selective area bonding process. Anchors such as thesecan be placed at the ends of narrow mesas as in the “dog-bone” version.Anchors can also be placed at the sides of mesas (see peninsular anchor)such that they are attached to the mesa via a narrow connection 304which is undercut and will break preferentially during transfer.Geometric features that act as stress concentrators 305 can be added tothe anchors to further restrict where breaking will occur. The bondmedia can also be partially extended onto the anchor to prevent breakagenear the mesa.

FIG. 10b is a simplified view of anchored PEC undercut (side-view) in anexample. Shown is a side view illustration of the anchored PEC undercut.Posts of sacrificial region are included at each end of the epitaxialdie for mechanical support until the bonding process is completed. Afterbonding the epitaxial material will cleave at the unsupported thin filmregion between the bond pads and intact sacrificial regions, enablingthe selective area bonding process. Typical epitaxial and processinglayers are included for example purposes and are n-GaN and n-sidecladding layers 101, active region 102, p-GaN and p-side cladding 103,insulating layers 104 and contact/pad layers 105. Additionally, asacrificial region 107 and bonding material 108 are used during the dieexpansion process. Epitaxial material is transferred from the galliumand nitrogen containing epitaxial wafer 100 to the carrier wafer 106.Further details of the present method and structures can be found moreparticularly below.

FIG. 11a shows a plan-view schematic of an example of a transferablemesa of GaN epitaxial material with a metal anchor bridging between thebond metal on the top of the mesa and the cathode metal in the etchedfield.

FIG. 11b presents a cross-sectional view of an example of a transferableGaN mesa at the location of a metal anchor. Here the mesa is formed bychemical etching and includes the p-type cladding layers, the lightemitting layers of the optoelectronic device, the n-type claddinglayers, the quantum wells comprising the sacrificial layer and a portionof the n-type GaN epitaxial layer beneath the sacrificial layer. Ap-contact metal is first deposited on the p-type GaN in order to form ahigh quality electrical contact with the p-type GaN. A second metalstack is then patterned and deposited on the mesa, overlaying thep-contact metal. The second metal stack consists of an n-contact metal,forming a good electrical contact with the n-type GaN beneath thesacrificial layer, as well as a relatively thick metal layer that actsas both the mesa bond pad as well as the cathode metal. The bond/cathodemetal also forms a thick layer overlaying the edge of the mesa andproviding a continuous connection between the mesa top and thesubstrate. After the sacrificial layer is removed by selectivephotochemical etching the thick metal provides mechanical support toretain the mesa in position on the GaN wafer until the bonding to thecarrier wafer is carried out.

FIG. 11c is a schematic representation of charge flow in a device usinga metal anchor during photoelectrochemical [PEC] etching of thesacrificial layer. It is possible to selectively etch the sacrificiallayer even if the pump light is absorbed by the active region. Etchingin the PEC process is achieved by the dissolution of AlInGaN materialsat the wafer surface when holes are transferred to the etching solution.These holes are then recombined in the solution with electrons extractedat the cathode metal interface with the etching solution. Chargeneutrality is therefore achieved. Selective etching is achieved byelectrically shorting the anode to the cathode. Electron hole pairsgenerated in the device light emitting layers are swept out of the lightemitting layers by the electric field of the of the p-n junction. Sinceholes are swept out of the active region, there is little or no etchingof the light emitting layer. The buildup of carriers produces apotential difference that drives carriers through the metal anchorswhere they recombine. The flat band conditions in the sacrificial regionresult in a buildup of holes that result in rapid etching of thesacrificial layers.

FIG. 12 is a simplified illustration of a carrier wafer processed to actas a submount. The carrier wafer 402 is processed such that the backsidecontains a bonding media 401 which could be epoxy, gold-tin solder orthe like. The carrier is also processed with a first passivating layer403 that electrically isolates the carrier wafer from the overlayinglayers. A conductive bond pad 405 overlays the passivating layer andallows for electrical access via a probe or wire bond to the bond pad108 used during the laser die transfer process. After transfer of thelaser die 406 a second electrical contact and bond-pad layer 407 isadded overlaying both the laser device patterned on the die as well aspart of the bottom side contact pad 405. A second passivating layer 408separates the two bond pads.

FIG. 13 is top view of a selective area bonding process with dieexpansion in two dimensions in an example. The substrate 901 ispatterned with transferrable die 903. The carrier wafer 902 is patternedwith bond pads 904 at both a second and fourth pitch that are largerthan the die pitches on the substrate. After the first bonding, a subsetof the laser die is transferred to the carrier. After the second bondinga complete row of die are transferred.

FIG. 14 is a flow diagram for processing steps and material inputs for atypical laser diode device in and example. Here GaN substrates aredeposited on to form a LD device wafer. Laser ridges, along withpassivation and electrical contact layers are fabricated on the waferfront side. The wafer is then thinned, which consumes most of thethickness of the wafer. The backside electrical contacts are processed.The wafer is then scribed and cleaved to form facets, facet coatings areadded and the laser devices are tested for quality assurance. The laserbars are then singulated into individual die and attached to a submount.The process flow for a GaAsP based laser would be substantively similar.

FIG. 15 is a flow diagram for processing steps and material inputs for alow cost GaN laser device fabricated with epitaxial transfer to acarrier wafer in and example. Here GaN substrates are deposited on toform a LD device wafer. Laser die are processed in preparation fortransfer. The laser die are then transferred to a carrier wafer. Laserridges, passivation layers and contacts are then fabricated on the dieon the carrier. In the case where etched facets are used the devices aretested on wafer. The carrier is then singulated into individual die. Theprocess flow for a GaAsP based laser would be substantively similar.

FIG. 16 is a table showing number of laser devices that can be processedon a substrate at a given die pitch. The table shows values forsubstrates of three geometries 25.4 mm, 32 mm diameter round wafers and2×2 cm² square wafers. As the die pitch is decreased the density ofdevices that can be processed on a substrate increases dramatically.

FIG. 17 is an illustration of bondable area for various substratedimensions on a 100 mm diameter carrier wafer 1001. In thisconfiguration die expansion is happening in one dimension only. Thenumber of transfers possible is fixed by the size and shape of thesubstrate relative to the carrier. Several examples are shown, including25.4 mm diameter wafers 1002, 32 mm diameter wafers 1003 and 2×2 cm²substrates 1004.

FIG. 18 is a table showing number of laser devices that can be processedon about 50 micron wide die after epi transfer to a carrier at varioussecond pitches. The second pitch, e.g. the die pitch on the carrier,relative to the pitch on the substrate determines the fraction of die onthe substrate that can be transferred in each transfer step. A carrierwafer may therefore contain die from multiple substrates, one substrateor only part of a single substrate depending on the sizes of the firstand second pitches.

FIG. 19 shows a pictorial representation of the process flow forfabrication of GaN based laser diodes devices from epitaxial films onsubstrates to final applications. Die may be fabricated on 32 mm GaNwafers and then transferred to a 100 mm SiC substrate. After processingof the die into laser devices the SiC carrier is singulated intoindividual laser chips that are ready to be installed in variousapplications such as displays, light sources for general lighting,projectors and car headlamps among others. In this example, about 50micron wide mesas with a first pitch of about 70 microns may betransferred to the carrier wafer at a second pitch of about 490 microns.

FIG. 20 shows a schematic representation of a typical laser die onsubmount 1102 and a device of this invention 1101. The die on submountmay be about 1.2 mm long by about 30 micron wide laser ridge fabricatedon a GaN substrate thinned to about 75 microns and cleaved into laserdie about 1.2 mm long and about 150 microns wide. These die are thenattached to a larger submount patterned with electrically isolated wirebond pads. The wire bond pads are connected electrically to the top andbottom of the laser die via wire bonds and a soldered connectionrespectively. In the chip-scale device, an array of about 50 micron wideby about 1.2 mm by about 2 micron thick laser die are transferred to aSiC carrier wafer, electrical connections and wire-bond pads arefabricated using wafer-scale lithographic processes. The resulting chipis about 1.2 mm by about 0.5 mm wide, however it should be noted thatthe size of the resulting chip can be scaled by adjusting the pitch ofthe laser die array on the carrier wafer. In both devices, electricalcontact to the pads can be made either by wire bonds or via detachableconnections such as pogo-pins, spring clips or the like.

With respect to AlInGaN laser devices, these devices include a galliumand nitrogen containing substrate (e.g., GaN) comprising a surfaceregion oriented in a polar c-plane {0001} orientation, but can be otherssuch as nonpolar or semipolar. The device also has a gallium andnitrogen containing material comprising InGaN overlying the surfaceregion. As used herein, the term “substrate” can mean the bulk substrateor can include overlying growth structures such as a gallium andnitrogen containing epitaxial region, or functional regions such asn-type GaN, combinations, and the like.

GaN light emitting diodes (LEDs) and laser diodes (LDs) are typicallyproduced on c-plane oriented substrates. In the case of LEDs these aretypically GaN templates, i.e. thin GaN films grown heteroepitaxially onchemically dissimilar substrates. For example, GaN films may be grown onsapphire, SiC, silicon and spinel among others. In this case theorientation of the GaN film is determined by the crystal structure andorientation of the substrate and the defectivity of the GaN layer isdetermined by the lattice mismatch between GaN and the substrate as wellas the particulars of the growth of the GaN layer. In the case of laserdiodes, the high density of extended defects found in templates leads tounacceptably high failure rates. This was first solved by the use oflateral epitaxial overgrowth to produce templates with large regions ofreduced defect density. Current state of the art is to use bulk GaNsubstrates produced by growth of reduced defect density boules either byhydride vapor phase epitaxy or ammonothermal growth. In both casesrelatively large (e.g. typically two inch diameter or greater) GaNwafers can be produced which have relatively low density of uniformlydistributed defects. Growth on c-plane wafers is advantageous to growthon non-polar and semi-polar oriented GaN wafers only in the aspect thattwo-inch and greater diameter c-plane wafers are currently available andnon-polar and semi-polar orientations are generally restricted in sizedue to their being crosscut from c-plane oriented boules.

C-plane GaN wafers with no offcut are oriented primarily with thesurface normal parallel to the [0001] direction of the wurtzite crystallattice. The wafer may have an offcut, where the surface normal of thewafer is tilted towards one or a combination of the <11-20> or <10-10>directions. For an arbitrary offcut direction one would normally specifythe tilt towards orthogonal pairs of directions found in the <11-20> and<10-10> families. For example, [10-10] and [1-210] are orthogonal andmight be used to specify an arbitrary offcut. In general, offcuts willbe predominantly towards only one of the <11-20> or <10-10> directions,with only relatively small deviations. For example, a c-plane wafer mayhave an offcut between 0.1 and 10 degrees towards the [10-10] directionor it may have an offcut between 0.1 and 10 degrees towards the [11-20]direction. Though larger and smaller offcuts would be possible, a waferwith an offcut less than 0.1 degrees would be considered to be nominallyon-axis.

Wafer offcut is important because it will determine both the density ofatomic steps on the wafer surface as well as the termination of the stepedges. Because an arbitrarily oriented surface of a crystal is likely tohave a high surface energy, a crystal will tend to form an approximationof an inclined face using a collection of low energy planes. In general,an offcut c-plane wafer would result in a stepped surface comprised of[0001] step surfaces and step-edges composed of prismatic planes (i.e.(11-20) or (10-10)). Due to anisotropy in the crystal structure thenumber and configuration of dangling bonds at (11-20) step edges will bedifferent from those at a (10-10) step edge. Since the direction andmagnitude of the offcut controls the density and orientation of the stepedges, a large amount of control over the chemical character of thesubstrate can be affected by offcut. Many growth processes such aschemical ordering, incorporation of volatile species and formation ofstacking faults can be linked to the way atoms incorporate at the edgesof steps. Therefore, proper selection of substrate offcut is critical toachieving the best epitaxial film quality.

Though c-plane wafers are larger than non-polar and semi-polar orientedwafers and offer a cost advantage, they have a severe drawback.Typically c-plane lasers require the use of only a few narrow quantumwells due to the internal polarization fields that result in a spatialseparation of electron and hole states within wide wells that negativelyimpacts the differential gain. Using few narrow wells has the negativeeffect of limiting the index contrast that can be achieved between theactive region and GaN cladding layers. In order to increase the indexcontrast between the active region and the cladding layers and therebyincrease the optical confinement, c-plane devices typically utilizealuminum containing cladding layers. An attractive feature of nonpolarand semipolar oriented laser diodes is the freedom to design epitaxialstructures with several quantum wells that can be much thicker than inc-plane. This can enable designs that do not require Al-containingcladding layers.

There are a number of disadvantages to using aluminum containingcladding. AlGaN layers tend to be more resistive than GaN, especiallywhen doped p-type, adding to the total series resistance of the laserdevices. AlGaN is also under tension when grown on unstrained GaNlayers, which limits both the thickness and composition of the AlGaNcladding that can be grown before cracks or other extended defects formdue to the tensile strain. High quality AlGaN growth also typicallyrequires higher growth temperatures and slower growth rates than GaN.Aluminum containing precursors also react more readily in the gas phasethan those of indium and gallium, resulting in the formation of moreparticles and related contamination of the epitaxial films duringgrowth. Quaternary (AlInGaN) cladding is one possible alternative,however AlInGaN layers only solve the issues related to tensile strainwhile introducing more difficult growth control as the high temperaturesrequired to grow high-quality AlInGaN also inhibit the incorporation ofindium.

This invention in application to c-plane laser diode devices isadvantageous in that it allows for the substitution of the thickrelatively high aluminum content cladding layers by non-epitaxial or exsitu deposited materials with equivalent or lower refractive index. Forexample, a thin device structure consisting of several hundrednanometers of GaN cladding on either side of the InGaN quantum wellscould be clad with high conductivity but low absorptivity TCO such asZnO, ZnGaO, Ga2O3, ITO and the like. Since the refractive index of thesematerials is much lower than that of low composition AlGaN highlyconfining waveguides are easily made even with active regions that wouldotherwise not support a guided mode, and depending on design may havebetter optical confinement than a conventional device utilizing thethick and relatively high aluminum-content cladding layers. As analternative to low index materials such as TCOs, highly reflectivemetals can be used to help confine the mode by using thin claddingregions without causing unacceptable levels of loss. Examples of suchreflective metals include silver, aluminum, and gold. In certainembodiments the entire AlGaN cladding layers can be eliminated from theepitaxial structure and in other embodiments thinner and/or loweraluminum content cladding layers can coexist with the low index ex-situdeposited materials such as TCOs and/or the reflective metals. Usingsuch a structure would also improve process cleanliness, increasethroughput by reducing the growth time significantly and lower deviceresistivity.

In an embodiment, a sacrificial layer is grown along with an n-contactlayer that will be exposed after transfer. Overlaying the n-contactlayer are layers comprising a structure similar to that of aconventional c-plane laser diode. In this embodiment an n-type GaNbuffer layer is grown on a c-plane oriented, bulk-GaN wafer. Overlayingthe buffer layer is a sacrificial layer comprised by InGaN wellsseparated by GaN barriers with the well composition and thickness chosento result in the wells absorbing light at wavelengths shorter than 450nm, though in some embodiments the absorption edge would be as short as400 nm and in other embodiments as long as 520 nm. Overlaying thesacrificial layer is an n-type contact layer consisting of GaN dopedwith silicon at a concentration of 5E18 cm-3, though in otherembodiments the doping may range between 1E18 and 1E19 cm-3. Overlayingthe contact layer is an n-type AlGaN cladding layer with a thickness of1 micron with an average composition of 4% AlN, though in otherembodiments the thickness may range from 0.25 to 2 microns with anaverage composition of 1-8% AlN. Overlaying the n-cladding is an n-typewave-guiding or separate confinement heterostructure (SCH) layer thathelps provide index contrast with the cladding to improve confinement ofthe optical modes. The nSCH is InGaN with a composition of 4% InN andhas a thickness of 100 nm, though in other embodiments the InGaN nSCHmay range from 20 to 300 nm in thickness and from 0-8% InN and may becomposed of several layers of varying composition and thickness.Overlaying the n-SCH are light emitting layers consisting of two 3.5 nmthick In_(0.15)Ga_(0.85)N quantum wells separated by 4 nm thick GaNbarriers, though in other embodiments there may 1 to five light emittinglayers consisting of 1 nm to 6 nm thick quantum wells separated by GaNor InGaN barriers of 1 nm to 25 nm thick. Overlaying the light emittinglayers is an InGaN pSCH with a composition of 4% InN and has a thicknessof 100 nm, though in other embodiments the nSCH may range from 20 to 300nm in thickness and from 0-8% InN and may be composed of several layersof varying composition and thickness. Overlaying the pSCH is an AlGaNelectron blocking layer [EBL] with a composition of 10% AlN, though inother embodiments the AlGaN EBL composition may range from 0% to 30%AlN. Overlaying the EBL a p-type AlGaN cladding layer with a thicknessof 0.2 micron with an average composition of 4% AlN, though in otherembodiments the thickness may range from 0.25 to 2 microns with anaverage composition of 1-8% AlN. Overlaying the p-AlGaN cladding isp-GaN cladding with a thickness of 700 nm, though in other embodimentsthe p-GaN cladding thickness may range from 0 nm to 1500 nm. The p-GaNcladding is terminated at the free surface of the crystal with a highlydoped p++ or p-contact layer that enables a high quality electricalp-type contact to the device. This device is shown in schematic form inFIG. 21.

As further background for the reader, gallium nitride and relatedcrystals are difficult to produce in bulk form. Growth technologiescapable of producing large area boules of GaN are still in theirinfancy, and costs for all orientations are significantly more expensivethan similar wafer sizes of other semiconductor substrates such as Si,GaAs, and InP. While large area, free-standing GaN substrates (e.g. withdiameters of two inches or greater) are available commercially, theavailability of large area non-polar and semi-polar GaN substrates isquite restricted. Typically, these orientations are produced by thegrowth of a c-plane oriented boule, which is then sliced intorectangular wafers at some steep angle relative to the c-plane. Thewidth of these wafers is limited by the thickness of the c-planeoriented boule, which in turn is restricted by the method of bouleproduction (e.g. typically hydride vapor phase epitaxy (HVPE) on aforeign substrate). Such small wafer sizes are limiting in severalrespects. The first is that epitaxial growth must be carried out on sucha small wafer, which increases the area fraction of the wafer that isunusable due to non-uniformity in growth near the wafer edge. The secondis that after epitaxial growth of optoelectronic device layers on asubstrate, the same number of processing steps are required on the smallwafers to fabricate the final device as one would use on a large areawafer. Both of these effects drive up the cost of manufacturing deviceson such small wafers, as both the cost per device fabricated and thefraction of wafer area that is unusable increases with decreasing wafersize. The relative immaturity of bulk GaN growth techniques additionallylimits the total number of substrates which can be produced, potentiallylimiting the feasibility scaling up a non-polar or semi-polar GaNsubstrate based device.

Given the high cost of all orientations of GaN substrates, thedifficulty in scaling up wafer size, the inefficiencies inherent in theprocessing of small wafers, and potential supply limitations onsemipolar and nonpolar wafers, it becomes extremely desirable tomaximize utilization of substrates and epitaxial material. In thefabrication of lateral cavity laser diodes, it is typically the casethat minimum die length is determined by the laser cavity length, butthe minimum die width is determined by other device components such aswire bonding pads or considerations such as mechanical area for diehandling in die attach processes. That is, while the laser cavity lengthlimits the laser die length, the laser die width is typically muchlarger than the laser cavity width. Since the GaN substrate andepitaxial material are only critical in and near the laser cavity regionthis presents a great opportunity to invent novel methods to form onlythe laser cavity region out of these relatively expensive materials andform the bond pad and mechanical structure of the chip from a lower costmaterial. Typical dimensions for laser cavity widths are about 1-30 μm,while wire bonding pads are ˜100 μm wide. This means that if the wirebonding pad width restriction and mechanical handling considerationswere eliminated from the GaN chip dimension between >3 and 100 timesmore laser diode die could be fabricated from a single epitaxial wafer.This translates to a >3 to 100 times reduction in epitaxy and substratecosts. In conventional device designs, the relatively large bonding padsare mechanically supported by the epitaxy wafer, although they make nouse of the material properties of the semiconductor beyond structuralsupport.

In another embodiment, low-refractive index TCO cladding layers areapplied to both the p-type and n-type side of the laser diode to enhancethe optical confinement of the structure. Because of this,low-refractive index aluminum containing layers are not necessary, whichreduces the overall strain in the epitaxial structure, the time requiredfor deposition of the device layers in the growth chamber and the seriesresistance of the device as relatively thick and resistive layers ofAlGaN or AlInGaN are not present in the structure. In this embodiment ann-type GaN buffer layer is grown on a c-plane oriented, bulk-GaN wafer.Overlaying the buffer layer is a sacrificial layer comprised by InGaNwells separated by GaN barriers with the well composition and thicknesschosen to result in the wells absorbing light at wavelengths shorterthan 450 nm, though in some embodiments the absorption edge would be asshort as 400 nm and in other embodiments as long as 520 nm. Overlayingthe sacrificial layer is an n-type contact layer consisting of GaN dopedwith silicon at a concentration of 5E18 cm-3, though is otherembodiments the doping may range between 1E18 and 1E19 cm-3. Overlayingthe contact layer is an n-type GaN cladding layer with a thickness of100 nanometers, though in other embodiments the thickness may range from50 to 1000 nanometers and may be composed of alloys of InGaN rangingfrom 0.5-10% InN. Overlaying the n-GaN cladding is an n-typewave-guiding or separate confinement heterostructure (SCH) layer thathelps provide index contrast with the cladding to improve confinement ofthe optical modes. The nSCH is InGaN with a composition of 4% InN andhas a thickness of 100 nm, though in other embodiments the nSCH mayrange from 20 to 300 nm in thickness and from 0-8% InN and may becomposed of several layers of varying composition and thickness.Overlaying the n-SCH are light emitting layers consisting of two 3.5 nmthick In_(0.15)Ga_(0.85)N quantum wells separated by 4 nm thick GaNbarriers, though in other embodiments there may 1 to five light emittinglayers consisting of 1 nm to 6 nm thick quantum wells separated by GaNor InGaN barriers of 1 nm to 25 nm thick. Overlaying the light emittinglayers is an InGaN pSCH with a composition of 4% InN and has a thicknessof 100 nm, though in other embodiments the nSCH may range from 20 to 300nm in thickness and from 0-8% InN and may be composed of several layersof varying composition and thickness. Overlaying the pSCH is an AlGaNelectron blocking layer [EBL] with a composition of 10% AlN, though inother embodiments the AlGaN EBL can range in composition from 0% to 30%AlN. Overlaying the contact layer is a p-type GaN cladding layer with athickness of 100 nanometers, though in other embodiments the thicknessmay range from 50 to 1000 nanometers and may be composed of alloys ofInGaN ranging from 0.5-10% InN. The p-GaN cladding is terminated at thefree surface of the crystal with a highly doped p++ or p-GaN contactlayer that enables a high quality electrical p-type contact to thedevice. This device is shown in schematic form in FIG. 22.

FIG. 23 shows a comparison of schematic representations of the finalstructure of a conventional c-plane laser diode to a transferred c-planelaser diode with low-index, TCO cladding on both sides of the diode.Metal contact layers, ridges and related structures, passivating oxidesand other device specific features are not shown for clarity. Of note isthe difference in total thickness of epitaxial material between the twotypes of devices. The TCO clad transferred device contains less than 0.5microns of epitaxial material, whereas the conventional laser diodecontains over two microns of epitaxial material, with the majority ofthe thickness of the device consisting of aluminum containing alloysthat are typically grown with relatively low growth rates. Due to thethinness of the quantum wells in c-plane laser diodes it is not possiblefor high optical confinement factors to be achieved when relying only onthe index contrast between the InGaN layers and GaN cladding layers. Toprovide sufficient optical confinement for high differential gainrelatively low index AlGaN layers are added. As previously mentioned,these layers are typically more resistive than an equivalently doped GaNlayer, with the difference being larger for p-type layers relative ton-type. Moreover, there are limits to how much optical confinement onecan achieve with aluminum containing layers. In order to achieve highindex contrast, layers with very high aluminum content must be grown.This, however, leads to both increased resistivity as well as increasedtensile strain. In practice, it is not possible to confine the opticalmode in a very small volume due to the lack of index contrast due to therelatively small difference in index contrast between AlN and GaN, whichare about 2.2 and about 2.4, respectively, at 450 nanometers. Claddingthe active region on both sides with transparent conductive oxide,however, allows for confinement of the optical mode into very smallvolumes, resulting in relatively high confinement factors. This isbecause TCOs tend to have relatively small refractive indices (e.g. onthe order of 1.9-2.0). FIG. 24 shows results for simulations of theconfinement factors for a conventional c-plane laser structure [dashedline] and a c-plane laser structure utilizing TCO cladding on both sidesof the cavity [solid points and line]. These structures correspond tothose shown in FIG. 23. The y-axis gives the simulated confinementfactor, while the x-axis shows the thickness of GaN cladding in the TCOclad structure. As can be seen, for instances where the GaN cladding isbelow 300 nm in thickness the TCO clad structure has a higherconfinement factor than the conventional c-plane laser diode. For verythin GaN claddings [i.e. very thin cavities] the confinement factor isas much as 50% higher than the conventional laser diode. This increasedconfinement factor leads directly to increased differential gain in theTCO clad structure.

In yet another embodiment, the TCO layers depicted in FIG. 22 arereplaced by reflective metals. As an example, aluminum could be used forthe n-contact and silver could be used on the p-contact. In thisembodiment the metal would serve to confine the optical mode withoutcontributing an unacceptable amount of modal loss.

In an example, this method uses conventional planar growth of a LDepi-structure on a polar c-plane GaN substrate. A transparent conductiveoxide (TCO) is then deposited on the free epitaxial surface to form atransparent, conductive contact layer with an index of refraction lowerthan GaN or AlGaN films of compositions that can be grown fully strainedat the thicknesses needed to provide sufficient confinement of theoptical mode. Two example TCOs are indium tin oxide (ITO) and zinc oxide(ZnO). ITO is the commercial standard for TCOs, and is used in a varietyof fields including displays and solar cells where a semi-transparentelectrical contact is desired. ZnO offers the advantage of being adirect gap semiconductor with the same crystal structure as GaN and canbe grown epitaxially on GaN at temperatures relatively low compared togrowth temperatures of AlInGaN alloys. The bandgap of ZnO is alsosufficiently large and similar to GaN (approx. 3.3 eV) that it willexhibit negligible band-edge absorption of visible wavelengths of light.ZnO can be deposited in a variety of ways such as metal organic chemicalvapor deposition, other vapor deposition techniques, and from asolution. In another example the TCO is replaced with a reflective metalsuch as aluminum, silver, gold or other. In yet another example acombination of a TCO and a reflective metal is employed.

The wafer is then bonded to a handle, with the free-surface of the TCOadjacent to the bonding interface. The bonding can either be direct,i.e. with the TCO in contact with the handle material, or indirect, i.e.with a bonding media disposed between the TCO and the handle material inorder to improve the bonding characteristics. For example, this bondingmedia could be Au—Sn solder, CVD deposited SiO2, a polymer, CVD orchemically deposited polycrystalline semiconductor or metal, etc.Indirect bonding mechanisms may include thermocompression bonding,anodic bonding, glass frit bonding, bonding with an adhesive with thechoice of bonding mechanism dependent on the nature of the bondingmedia.

Thermocompression bonding involves bonding of wafers at elevatedtemperatures and pressures using a bonding media disposed between theTCO and handle wafer. The bonding media may be comprised of a number ofdifferent layers, but typically contain at least one layer (the bondinglayer) that is composed of a relatively ductile material with a highsurface diffusion rate. In many cases this material is either Au, Al orCu. The bonding stack may also include layers disposed between thebonding layer and the TCO or handle wafer that promote adhesion or actas diffusion barriers should the species in the TCO or handle wafer havea high solubility in the bonding layer material. For example an Aubonding layer on a Si wafer may result in diffusion of Si to the bondinginterface, which would reduce the bonding strength. Inclusion of adiffusion barrier such as silicon oxide or nitride would limit thiseffect. Relatively thin layers of a second material may be applied onthe top surface of the bonding layer in order to promote adhesionbetween the bonding layers disposed on the TCO and handle. Some bondinglayer materials of lower ductility than gold (e.g. Al, Cu etc.) or whichare deposited in a way that results in a rough film (for exampleelectrolytic deposition) may require planarization or reduction inroughness via chemical or mechanical polishing before bonding, andreactive metals may require special cleaning steps to remove oxides ororganic materials that may interfere with bonding.

Metal layer stacks may be spatially non-uniform. For example, theinitial layer of a bonding stack may be varied using lithography toprovide alignment or fiducial marks that are visible from the backsideof the transparent substrate.

Thermocompressive bonding can be achieved at relatively lowtemperatures, typically below 500 degrees Celsius and above 200.Temperatures should be high enough to promote diffusivity between thebonding layers at the bonding interface, but not so high as to promoteunintentional alloying of individual layers in each metal stack.Application of pressure enhances the bond rate, and leads to someelastic and plastic deformation of the metal stacks that brings theminto better and more uniform contact. Optimal bond temperature, time andpressure will depend on the particular bond material, the roughness ofthe surfaces forming the bonding interface and the susceptibility tofracture of the handle wafer or damage to the device layers under load.

The bonding interface need not be composed of the totality of the wafersurface. For example, rather than a blanket deposition of bonding metal,a lithographic process could be used to deposit metal in discontinuousareas separated by regions with no bonding metal. This may beadvantageous in instances where defined regions of weak or no bondingaid later processing steps, or where an air gap is needed. One exampleof this would be in removal of the GaN substrate using wet etching of anepitaxially grown sacrificial layer. To access the sacrificial layer onemust etch vias into either of the two surfaces of the epitaxial wafer,and preserving the wafer for re-use is most easily done if the vias areetched from the bonded side of the wafer. Once bonded, the etched viasresult in channels that can conduct etching solution from the edges tothe center of the bonded wafers, and therefore the areas of thesubstrate comprising the vias are not in intimate contact with thehandle wafer such that a bond would form.

The bonding media can also be an amorphous or glassy material bondedeither in a reflow process or anodically. In anodic bonding the media isa glass with high ion content where mass transport of material isfacilitated by the application of a large electric field. In reflowbonding the glass has a low melting point, and will form contact and agood bond under moderate pressures and temperatures. All glass bonds arerelatively brittle, and require the coefficient of thermal expansion ofthe glass to be sufficiently close to the bonding partner wafers (i.e.the GaN wafer and the handle). Glasses in both cases could be depositedvia vapor deposition or with a process involving spin on glass. In bothcases the bonding areas could be limited in extent and with geometrydefined by lithography or silk-screening process.

Direct bonding between TCO deposited on both the GaN and handle wafers,of the TCO to the handle wafer or between the epitaxial GaN film and TCOdeposited on the handle wafer would also be made at elevatedtemperatures and pressures. Here the bond is made by mass transport ofthe TCO, GaN and/or handle wafer species across the bonding interface.Due to the low ductility of TCOs the bonding surfaces must besignificantly smoother than those needed in thermocompressive bonding ofmetals like gold.

The embodiments of this invention will typically include a ridge of somekind to provide lateral index contrast that can confine the optical modelaterally. One embodiment would have the ridge etched into theepitaxially grown GaN cladding layers. In this case, it does not matterwhether the ridge is etched into the p-type GaN layer before TCOdeposition and bonding or into the n-type layer after bonding andremoval of the substrate. FIG. 25 is an example schematic cross sectionof laser waveguide with double conductive oxide cladding showing ridgeformation in n-type gallium and nitrogen containing material such as GaNin an example. FIG. 26 is an example schematic cross section of laserwaveguide with double conductive oxide cladding showing ridge formationin p-type gallium and nitrogen containing material such as GaN. In thiscase, the TCO would have to be planarized somehow to provide a surfaceconducive to bonding unless a reflowable or plastically deformablebonding media is used which could accommodate large variations in heighton the wafer surface. FIG. 27 is an example schematic cross section oflaser waveguide with double conductive oxide cladding showing ridgeformation in n-type and in p-type gallium and nitrogen containingmaterial such as GaN. FIG. 28 is an example schematic cross section oflaser waveguide where the lateral waveguide ridge is formed in thetransparent conductive oxide.

With respect to AlInGaN laser devices, these devices include a galliumand nitrogen containing substrate (e.g., GaN) comprising a surfaceregion oriented in either a semipolar [(11-21), (20-21), (20-2-1), amongothers] or non-polar [(10-10) or (11-20)] configuration, but can beothers. The device also has a gallium and nitrogen containing materialcomprising InGaN overlying the surface region. In a specific embodiment,the present laser device can be employed in either a semipolar ornon-polar gallium containing substrate, as described below. As usedherein, the term “substrate” can mean the bulk substrate or can includeoverlying growth structures such as a gallium and nitrogen containingepitaxial region, or functional regions such as n-type GaN,combinations, and the like. We have also explored epitaxial growth andcleave properties on semipolar crystal planes oriented between thenonpolar m-plane and the polar c-plane. In particular, we have grown onthe {30-31} and {20-21} families of crystal planes. We have achievedpromising epitaxy structures and cleaves that will create a path toefficient laser diodes operating at wavelengths from about 400 nm togreen, e.g., 500 nm to 540 nm. These results include bright blue epitaxyin the 450 nm range, bright green epitaxy in the 520 nm range, andsmooth cleave planes orthogonal to the projection of the c-direction.

In a specific embodiment, the gallium nitride substrate member is a bulkGaN substrate characterized by having a semipolar or non-polarcrystalline surface region, but can be others. In a specific embodiment,the bulk nitride GaN substrate comprises nitrogen and has a surfacedislocation density between about 10E5 cm⁻² and about 10E7 cm⁻² or below10E5 cm⁻². The nitride crystal or wafer may compriseAl_(x)In_(y)Ga_(1-x-y)N, where 0≤x, y, x+y≤1. In one specificembodiment, the nitride crystal comprises GaN. In one or moreembodiments, the GaN substrate has threading dislocations, at aconcentration between about 10E5 cm⁻² and about 10E8 cm⁻², in adirection that is substantially orthogonal or oblique with respect tothe surface. As a consequence of the orthogonal or oblique orientationof the dislocations, the surface dislocation density is between about10E5 cm⁻² and about 10E7 cm⁻² or below about 10E5 cm⁻². In a specificembodiment, the device can be fabricated on a slightly off-cut semipolarsubstrate as described in U.S. Ser. No. 12/749,466 filed Mar. 29, 2010,which claims priority to U.S. Provisional No. 61/164,409 filed Mar. 28,2009, which are commonly assigned and hereby incorporated by referenceherein.

Laser ablation is a process where an above-band-gap emitting laser isused to decompose an absorbing sacrificial (Al,In,Ga)N layer by heatingand inducing desorption of nitrogen. The remaining Ga sludge is thenetched away using aqua regia or HCl. This technique can be usedsimilarly to PEC etching in which a sacrificial material between theepitaxial device and the bulk substrate is etched/ablated away resultingin separation of the epitaxial structure and the substrate. Theepitaxial film (already bonded to a handling wafer) can then be lappedand polished to achieve a planar surface.

PEC etching is a photoassisted wet etch technique that can be used toetch GaN and its alloys. The process involves an above-band-gapexcitation source and an electrochemical cell formed by thesemiconductor and the electrolyte solution. In this case, the exposed(Al,In,Ga)N material surface acts as the anode, while a metal paddeposited on the semiconductor acts as the cathode. The above-band-gaplight source generates electron-hole pairs in the semiconductor.Electrons are extracted from the semiconductor via the cathode whileholes diffuse to the surface of material to form an oxide. Since thediffusion of holes to the surface requires the band bending at thesurface to favor a collection of holes, PEC etching typically works onlyfor n-type material although some methods have been developed foretching p-type material. The oxide is then dissolved by the electrolyteresulting in wet etching of the semiconductor. Different types ofelectrolyte including HCl, KOH, and HNO₃ have been shown to be effectivein PEC etching of GaN and its alloys. The etch selectivity and etch ratecan be optimized by selecting a favorable electrolyte. It is alsopossible to generate an external bias between the semiconductor and thecathode to assist with the PEC etching process.

Sacrificial layers for lift-off of the substrate via photochemicaletching would incorporate at a minimum a low-bandgap or doped layer thatwould absorb the pump light and have enhanced etch rate relative to thesurrounding material. The sacrificial layer can be deposited epitaxiallyand their alloy composition and doping of these can be selected suchthat hole carrier lifetime and diffusion lengths are high. Defects thatreduce hole carrier lifetimes and diffusion length must can be avoidedby growing the sacrificial layers under growth conditions that promotehigh material crystalline quality. An example of a sacrificial layerwould be InGaN layers that absorb at the wavelength of an external lightsource. An etch stop layer designed with very low etch rate to controlthe thickness of the cladding material remaining after substrate removalcan also be incorporated to allow better control of the etch process.The etch properties of the etch stop layer can be controlled solely byor a combination of alloy composition and doping. A potential etch stoplayer would an AlGaN layer with a bandgap higher than the external lightsource. Another potential etch stop layer is a highly doped n-type AlGaNor GaN layer with reduce minority carrier diffusion lengths and lifetimethereby dramatically reducing the etch rate of the etch stop material.

In an embodiment, selective etching of the sacrificial region usingphotoelectrochemical (PEC) etching is achieved without the use of anactive region protecting layer by electrically shorting the p-side ofthe laser diode pn-junction to the n-side. Etching in the PEC process isachieved by the dissolution of AlInGaN materials at the wafer surfacewhen holes are transferred to the etching solution. These holes are thenrecombined in the solution with electrons extracted at the cathode metalinterface with the etching solution. Charge neutrality is thereforeachieved. Selective etching is achieved by electrically shorting theanode to the cathode. Electron hole pairs generated in the device lightemitting layers are swept out of the light emitting layers by theelectric field of the of the pn-junction. Since holes are swept out ofthe active region, there is little or no etching of the light emittinglayer. The buildup of carriers produces a potential difference thatdrives carriers through the metal interconnects that short the anode andcathode where they recombine. The flat band conditions in thesacrificial region result in a buildup of holes that result in rapidetching of the sacrificial layers. In one embodiment, the metalinterconnects to short the anode and cathode can be used as anchorregions to mechanically hold the gallium and nitrogen containing mesasin place prior to the bonding step.

The relative etch rates of the sacrificial and active regions aredetermined by a number of factors, but primarily it is determined by thedensity of holes found in the active region at steady state. If themetal interconnects or anchors are very resistive, or if either thecathode or anode electrical contacts to the p-type and n-type,respectively, cladding regions are too resistive or have large schottkybarriers then it is possible for carriers to accumulate on either sideof the pn-junction. These carriers will produce an electric field thatacts against the field in the depletion region and will reduce themagnitude of the field in the depletion region until the rate ofphoto-generated carrier drift out of the active region is balanced bythe recombination rate of carriers via the metal layers shorting thecathode and anode. Some recombination will take place via photochemicaletching, and since this scales with the density of holes in the activeregion it is preferable to prevent the buildup of a photo-induced biasacross the active region.

PEC etching can be done before or after direct/indirect bonding of thefree surface of the TCO to the handle material. In one case, the PECetching is done after bonding of the p-side TCO to the handle materialand the PEC etch releases the III-nitride epitaxial material from theGaN substrate. In another case, PEC etching of the sacrificial layer isdone before bonding such that the III-nitride epitaxial material is heldmechanically stable on the GaN substrate via anchor regions formed fromsemiconductor, metal, or other materials. TCO is then deposited on theepitaxial material and the TCO free surface is bonded to a handle waferthat can be composed of various materials. After bonding, mechanicalforce is applied to the handle wafer and GaN substrate to complete therelease of III-nitride epitaxial material from the GaN substrate.

Undercut AlInGaAsP based laser diodes can be produced in a mannersimilar to GaN based laser diodes. There are a number of wet etches thatetch some AlInGaAsP alloys selectively.⁷ In one embodiment, an AlGaAs orAlGaP sacrificial layer could be grown clad with GaAs etch stop layers.When the composition of Al_(x)Ga_(1-x) As and Al_(x)Ga_(1-x)P is high(x>0.5) AlGaAs can be etched with almost complete selectivity (i.e. etchrate of AlGaAs>1E6 times that of GaAs) when etched with HF. InGaP andAlInP with high InP and AlP compositions can be etched with HClselectively relative to GaAs. GaAs can be etched selectively relative toAlGaAs using C₆H₈O₇:H₂O₂:H₂O. There are a number of other combinationsof sacrificial layer, etch-stop layer and etch chemistry which arewidely known to those knowledgeable in the art of micromachiningAlInGaAsP alloys.

In one embodiment, the AlInGaAsP device layers are exposed to the etchsolution which is chosen along with the sacrificial layer compositionsuch that only the sacrificial layers experience significant etching.The active region can be prevented from etching during thecompositionally selective etch using an etch resistant protective layer,such as like silicon dioxide, silicon nitride, metals or photoresistamong others, on the sidewall, as shown in FIG. 8.

With respect to AlInGaAsP laser devices, these devices include asubstrate made of GaAs or Ge, but may be others. As used herein, theterm “substrate” can mean the bulk substrate or can include overlyinggrowth structures such as arsenic or phosphorus containing epitaxialregion, or functional regions such as n-type AlGaAs, combinations, andthe like. The devices have material overlying the substrate composed ofGaAs, AlAs, AlGaAs, InGaAS, InGaP, AlInGaP, AlInGaAs or AlInGaAsP.Typically each of these regions is formed using at least an epitaxialdeposition technique of metal organic chemical vapor deposition (MOCVD),molecular beam epitaxy (MBE), or other epitaxial growth techniquessuitable for AlInGaAsP growth. In general these devices have an n-typeand p-type conducting layer which may form part of a n-type claddinglayer or p-type cladding layer, respectively, with lower refractiveindex than the light emitting active region. The n-cladding layers canbe composed of an alloy of AlInGaAsP containing aluminum. The devicescontain an active region which emits light during operation of thedevice. The active region may have one or more quantum wells of lowerbandgap than surrounding quantum barriers. Separate confinementheterostructures (SCHs) may be included with refractive index higherthan the cladding layers to improve confinement of the optical modes.SCHs and quantum wells are typically composed of InGaP, AlInGaP orInGaAsP, but may be other materials.

The device has a laser stripe region formed overlying a portion ofsurface region. The laser strip region has a first end and a second end,having a pair of cleaved mirror structures, which face each other. Thefirst cleaved facet comprises a reflective coating and the secondcleaved facet comprises no coating, an antireflective coating, orexposes As or P containing material. The first cleaved facet issubstantially parallel with the second cleaved facet. The first andsecond cleaved facets are provided by a scribing and breaking processaccording to an embodiment or alternatively by etching techniques usingetching technologies such as reactive ion etching (RIE), inductivelycoupled plasma etching (ICP), or chemical assisted ion beam etching(CAIBE), or other method. The first and second mirror surfaces eachcomprise a reflective coating. The coating is selected from silicondioxide, hafnia, and titania, tantalum pentoxide, zirconia, includingcombinations, and the like. Depending upon the design, the mirrorsurfaces can also comprise an anti-reflective coating.

In a preferred embodiment of this invention a laser device configuredwith multiple emitters is fabricated to form a laser bar. By placingmultiple epitaxial mesa dice regions on a common carrier wafer within anarea that will be formed into the final laser device upon singulation ofthe common carrier and then forming at least one laser stripe in eachepitaxial mesa dice, a laser bar is formed. Laser bars are idealsolutions in applications where very high power (>10 W) laser output isrequired. The present invention as it applies to laser bars can beapplied to a variety of applications, including defense and security,biomedicine and germicidal disinfection, industrial metrology andmaterials processing, as well as display and illumination.

In the field of defense and security, for example, laser bars are usedfor illumination in conjunction with detection systems that can be usedfor long range, high contrast imaging for example. Laser bars can beused for communications, and for range finding, as well as to generatelight for remote biological and chemical agent detection. Additionally,laser bars are used as light sources for environmental sensing,atmosphere control and monitoring, pollution monitoring, and otherecological monitoring since a myriad of different compounds aredetectable. Other applications within defense and security includeforensics, detection of altered documents, counterfeit currencydetection, and fingerprint detection. In these applications, the laserexcites fluorescence in the samples, revealing information that is notdetectable with visible illumination. At higher power levels, laser barsare used for target designation, and as countermeasures against heatseeking and other types of guided missiles and weapons. At the highestpower output levels, laser bars are used as the engine for high energylasers for directed energy weapons.

In biomedicine, laser bars are used in medical diagnostics applicationsutilizing fluorescence spectroscopy to detect and characterizeconstituents of particular samples. In addition to diagnostics, laserbars are used in medical therapies and procedures, includingopthamology, where high peak power systems can be used for cornealsculpting, flap cutting associated with LASIK for example. Laser barsare used extensively in dermatology, for example in hair removal forboth clinical and consumer applications. Laser bars are also used insurgical applications to cut or remove tissue selectively. Additionally,laser bars can be used for germicidal disinfection applications sincedeep UV laser bars would generate laser light at particular wavelengthsto kill microorganisms in food, air, and water (purification). As aresult, using UV laser bars in certain environments like circulating airor water systems creates a deadly effect on micro-organisms such aspathogens, viruses and molds that are in these environments. Coupledwith a filtration system, UV laser bars can remove harmfulmicro-organisms from these environments.

In industrial applications, laser bars are used in inspection andmetrology, with machine vision systems for example. Laser bars are usedin curing of materials such as epoxies, curing of paints and inks inindustrial printing. Laser bars are used in single mode and multimodeemission, and with individually addressable emitter emission or parallelemitter emission, in printing and reprographics applications. Laser barsare used in annealing and surface treatment applications of metals,semiconductors, and other advanced materials and composites. At higherpower densities, lasers bars are used for drilling, cutting, andwelding, for example in the automotive markets.

In the display and illumination markets, laser bars are frequently used.For example, projection displays utilize laser bars as the light sourceinstead of lamps or LEDs, including cinema, home theater, education, andboardroom type projectors. In LCD displays, laser bars are used forbacklighting or edge lighting instead of lamps or LEDs. In the lightingmarket, laser bars can be used for illumination applications fordirectional illumination such as spotlights and laser light shows, andcan be used in more general illumination applications as well, such asthe light source in flood lights, street lights, and high brightnesslight bulbs.

As described in this invention, laser bars can be formed from severalmaterial systems including GaAs (AlGaAsP), InP (InGaAsP), and GaN(AlInGAn) enabling a wide wavelength coverage range and serve thevarious applications described above. For example, the GaN system can beused to form bars operating in the wavelength range of 265 nm to servein germicidal applications, in the wavelength range of 285, 300, 365,385, 405 nm to serve in curing and printing applications, in thewavelength range of 405 nm to serve in applications of annealing forflat panel displays and other consumer electronics components, in thewavelength range of 405 or 445 nm to serve in illumination applicationsvia phosphor pumping, in the wavelength ranges of 405, 420, or 445 nm:to serve in surgical applications, or in the wavelength range of 445,450, 465, 510, 515, or 530 nm to serve in display applications. Inalternative examples the GaAs system can be used to form bars operatingin the wavelength range of 635 nm to serve display and photodynamictherapy applications, in the wavelength range of 792, 803, 808, 885,915, 940, 980 nm to serve solid state laser pumping and fiber laserpumping applications which play into defense, biomedical, and industrialtypes of lasers, in the wavelength range of 810 nm to serve in hairremoval applications, in the wavelengths range of 830 nm to serve inreprographic applications, or in the wavelength range of 1060 nm toserve in materials processing applications. In alternative examples theInP system can be used to form bars operating in the wavelength range of1470 nm to serve in the surgical and dermatology applications or in thewavelength range of 1540 nm to serve in defense and securityapplications.

The present invention enables significant improvements for improving thefunctionality and cost-efficiency of laser diodes, in particular,monolithically integrated devices containing more than one laser diodestripe onto a common substrate or carrier wafer such as a laser bar. Inparticular, the high cost of GaN substrates and epitaxy coupled withnon-optimized yields associated with GaN-based lasers renders GaN laserbars to be uneconomical. With the present invention where epitaxial mesaregions are selectively transferred to a carrier wafer for fabricationof the multiple laser emitter the usage efficiency of the epitaxial areaand gallium and nitrogen containing substrate is drastically increasedsuch that the GaN based laser bars or multi-emitter laser devices can bemanufactured economically. Several example advantages of multi-emitterdevices according to this invention are listed below.

1. Optimal spacing of laser stripes which enable close spacing withminimal thermal cross-talk between the adjacent lasers stripes, whilemaintaining spacing close enough for common optical elements.

2. Enablement of series and series-parallel electrical connectionsbetween the laser stripes on a common substrate.

3. Individually addressable laser stripes.

4. Manufacturing processes with enhanced yield and lower cost.

FIG. 29 (1) shows an example of the standard approach for manufacturingmonolithically integrated multiple-stripe laser devices on a gallium andnitrogen containing substrate, often referred to as laser bars. In thisconventional approach multiple laser diode stripe regions are fabricatedin the epitaxial material overlying the common gallium and nitrogencontaining epitaxial substrate 100 that the epitaxy was formed on,typically with epitaxial n-GaN and n-side cladding layers 101, activeregion 102, p-GaN and p-side cladding 103, insulating layers 104 andcontact/pad layers 105, with a common n-side contact layer 106. Theprocessed epitaxial wafer is separated into multiple-stripe laser diecontaining two or more laser stripes and electrically and thermallyconnected to a package or heat sink 108, most commonly using solder 107,with well-known soldering techniques. The package or heat sink acts as acommon electrical connection and the opposite-polarity electricalcontact is made to the other side of the laser bar with wire bonds. Inother examples, the multi-stripe lasers may be formed on GaAs or InPsubstrate.

There are several disadvantages with laser bars fabricated with thisconventional approach to forming multi-emitter laser diode.

1. The multiple, adjacent laser stripes are separated by a substantialdistance to reduce thermal and optical cross-talk between laser stripes,commonly limited to 50% fill-factor. This is achieved by a subtractiveprocess where 50% of the expensive epitaxial material is removed fromthe common growth substrate.

2. The common growth substrate is most-commonly fabricated from anelectrically conductive material, e.g. GaN or GaAs, resulting in aninherent limitation to massively parallel electrical connections betweenthe laser stripes. The result is a “low-voltage, high-current” (LVHC)electrical topology, which require high-cost electrical circuitry topower the laser bars.

3. The massively parallel electrical topology prohibits the individuallaser stripes to be separately addressed, limiting the functionality ofthe assembly.

4. The massively parallel electrical topology can lead to uniquecatastrophic failure modes which can occur during the manufacturingprocess or during operation in the field. Semiconductor defects oftenare expressed as an electrical leakage path. Hence any one defect on thelaser bar can lead to the failure of the entire assembly, either duringthe manufacturing process or during field operation.

5. The common soldering technique used for connecting the laser bar tothe package or heat sink leads to a thermal barrier (thermal resistor)between the heat generating region in the laser stripe and the heatsink. Additionally, there can be substantial cost and complexityassociated with the solder attachment to the heat sink.

FIG. 30 is a schematic cross-section of one embodiment of the presentinvention, where multiple laser stripes (or laser stripe regions), 103,are formed in separate adjacent transferred epitaxial mesa regionslocated onto the common carrier, 106. In one example, the multiple laserstripes are electrically connected through a common n-metal layer, 101,and a common p-metal layer, 105, separated by an insulating layer, 104,resulting in a parallel electrical topology. The common carrier wafermay be electrically conducting or electrically insulating, or anoptional insulating layer, 108, may be applied to the carrier waferprior to the common n-metal layer. Electrical connections to the metalpads of the multiple stripe laser are made through wire bonds or viadetachable connections such as pogo-pins, spring clips or the like, atone or more locations, 107, on each of the common n-metal layer andcommon p-metal layers.

FIG. 31 shows a top-view schematic of the embodiment shown in FIG. 30.The multiple laser stripes, 103, located on a common carrier, 106, andelectrically connected to common n-metal layers, 101, and common p-metallayers, 105, emit beams of laser radiation, 110, from one end of thedevice.

FIG. 32 is a schematic cross-section of another embodiment of thepresent invention where the multiple laser stripes, 103, formed ontransferred adjacent epitaxiam mesa regions located onto a commoncarrier, 106, are electrically connected in a series electricaltopology. The common carrier wafer may be electrically insulating, or anoptional insulating layer, 108, may be applied to the carrier waferprior to the common n-metal layer. Electrical connections to the metalpads of the multiple stripe laser are made through wire bonds or viadetachable connections such as pogo-pins, spring clips or the like, atone or more locations, 107, on each of the common n-metal layer andcommon p-metal layers.

FIG. 33 is a schematic cross-section of another embodiment of thepresent invention where the multiple laser stripes, 103, located onto acommon carrier, 106, are connected in a manner in which the individuallaser stripes may be separately electrically addressed. The commoncarrier wafer may be electrically conducting or electrically insulating,or an optional insulating layer, 108, may be applied to the carrierwafer prior to the common n-metal layer.

FIG. 34 shows a plane view schematic of the embodiment shown in FIG. 33.Separate electrical connections are made to each of the individuallyaddressable laser stripes, 103, at locations, 111, while electricalconnections to the common p-metal layers, 107. The separate n-metallayers overlaying each of the non-emitting ends of each laser stripe maybe optionally patterned, 112, to avoid contacting the underlying opticalfacet.

FIG. 35 displays electrical equivalent circuits for the threeembodiments shown in FIG. 31, FIG. 32 and FIG. 33, where the multiplelaser stripes are connected in parallel, series, and individuallyaddressable electrical topologies, respectively. The number ofindividual laser stripes on a multiple-stripe laser can be optimized fora given application.

FIG. 36 schematically illustrates the geometrical relationship betweenthe individual laser stripes on the epitaxial wafer prior to transfer tothe carrier wafer, and the desired spacing between the multiple laserstripes on the carrier wafer following die transfer. The pitch betweenadjacent laser stripes on a single multiple-stripe laser, Pitch 2, mustbe an integer multiple, N, of the pitch between adjacent laser stripeson the epitaxial wafer, Pitch 1, where N≥1. The pitch between adjacentmultiple-stripe lasers on a common carrier wafer, Pitch 3, must be aninteger multiple, M, of the pitch between adjacent laser stripes on theepitaxial wafer, Pitch 1, where M>N.

FIG. 37 is a simplified top view of a selective area bonding process andillustrates a die expansion process via selective areas bonding,resulting in a multiple-stripe laser. The original gallium and nitrogencontaining epitaxial wafer 201 has had individual die of epitaxialmaterial and release layers defined through processing. Individualepitaxial material die are labeled 202 and are spaced at pitch 1. Around carrier wafer 200 had been prepared with patterned bonding pads203. These bonding pads are spaced at pitch 2, which is an even multipleof pitch 1 such that selected sets of epitaxial die can be bonded ineach iteration of the selective area bonding process. The selective areabonding process iterations continue until all epitaxial die have beentransferred to the carrier wafer 204. The carrier wafer is thensingulated at pitch 3, resulting in a multitude of multiple-stripelasers. The gallium and nitrogen containing epitaxy substrate 201 cannow optionally be prepared for reuse.

FIG. 38 schematically illustrates one advantage of multiple-stripelasers 301, where, if the adjacent laser stripes on a die are spacedclosely enough, optical elements 302 may be shared, simplifying theoptical coupling of the multiple output laser light beams 303 andresulting in a lower implementation cost of an array of lasers.

FIG. 39 shows a top view illustrating another advantage of amultiple-stripe lasers 301, when output beam array is required, it makespossible the use of a single optical element 304 such as but not limitedto cylindrical lens, lens array, a fast axis collimating lens, a slowaxis collimating lens, or others.

In another embodiment of the present invention comprising amulti-emitter laser diode device an integrated red-green-blue (RGB) chipis formed. By placing one or more red epitaxial mesa dice regions, oneor more green epitaxial mesa dice regions, and one or more blueepitaxial mesa dice region on a common carrier wafer within an area thatwill be formed into the final laser device upon singulation of thecommon carrier and then forming at least one laser stripe in eachepitaxial mesa dice, an integrated RGB laser device can be formed. Suchan RGB laser device would be an ideal solutions in applications where avery compact RGB laser light source would be required such as in apico-projector or in augmented reality applications like Google glasses.

FIG. 40 is a drawing of a RGB laser chip fabricated using the selectivearea bonding process as according to an embodiment. Three laser dice 316are bonded to a carrier wafer 310 and processed with laser features(ridges, passivation, electrical contacts, etc.) such that the laserridges are parallel. The dice are electrically isolated from the carrierwafer material. A common bottom contact 314 is shared between the diewhile individual top-side electrical contacts 311 312 and 313 areprovided such that the laser devices on each die can be operatedindividually. The emission cones 315 of the laser devices on each of thedie overlap substantially, deviating only lateral by a distance lessthan or equal to the total width spanned by the laser dice. In thisdrawing the laser chip has been singulated from the original carrierwafer.

FIG. 41 is a drawing of a RGB laser chip fabricated using the selectivearea bonding according to an embodiment. Three laser dice 316 are bondedto a carrier wafer 310 and processed with laser features (ridges,passivation, electrical contacts, etc.) such that the laser ridges areparallel. The dice are electrically isolated from the carrier wafermaterial. The top-side electrical contacts 311, 312, and 313 for eachdie are used as the bonding layer for the next die such that the die areoverlaid. Passivating layers 324 are used to separate the bulk of thelaser die from the top-side electrical contacts such that current canonly pass through the etched laser ridge. In this configuration, thereis no electrode common to all laser die, but rather the anode for onedie acts as the cathode for the next. Due to overlaying the laser die,the ridges can be placed close together. As shown, the ridges do notoverlap, but it should be recognized that other configurations arepossible. For example, the ridges could be aligned laterally to withinthe tolerances of the lithographic process.

FIG. 42 shows a schematic of the cross section of a carrier wafer duringvarious steps in a process that achieves this. Die 502 from a firstepitaxial wafer is transferred to a carrier wafer 106 using the methodsdescribed above. A second set of bond pads 503 are then deposited on thecarrier wafer and are made with a thickness such that the bondingsurface of the second pads is higher than the top surface of the firstset of transferred die 502. This is done to provide adequate clearancefor bonding of the die from the second epitaxial wafer. A secondsubstrate 506 which might contain die of a different color, dimensions,materials, and other such differences is then used to transfer a secondset of die 507 to the carrier. Finally, the laser ridges are fabricatedand passivation layers 104 are deposited followed by electrical contactlayers 105 that allow each dice to be individually driven. The dietransferred from the first and second substrates are spaced at a pitch505 which is smaller than the second pitch of the carrier wafer 504.This process can be extended to transfer of die from any number ofsubstrates, and to the transfer of any number of laser devices per dicefrom each substrate.

FIG. 43 shows a schematic of the cross section of a carrier wafer duringvarious steps in a process that achieves this. Die 502 from a firstepitaxial wafer is transferred to a carrier wafer 106 using the methodsdescribed above. Laser ridges, passivation layers 104 and ridgeelectrical contacts 105 are fabricated on the die. Subsequently bondpads 503 are deposited overlaying the ridge electrical contacts. Asecond substrate 506 which might contain die of a different color,dimensions, materials, and other such differences is then used totransfer a second set of die 507 to the carrier at the same pitch as thefirst set of die. Laser ridges, passivation layers and ridge electricalcontacts can then be fabricated on the second set of die. Subsequent diebond and laser device fabrication cycles can be carried out to produce,in effect, a multi-terminal device consisting of an arbitrary number oflaser die and devices.

FIG. 44 shows schematics of the layout of three multi-die laser chipsaccording to embodiments of this invention. Layout A and accompanyingcross-section B show a laser chip comprised by a singulated piece of acarrier wafer 601, three laser die 602 transferred from epitaxialsubstrates, and metal traces and pads 603 for electrically connecting tothe die. Layout A has the die bonded directly to the carrier wafer,which is both conductive and which forms a common electrode connected toa metal pad 605 on the backside of the carrier wafer. A passivatinglayer 606 is used to isolate the metal traces and pads 603 which contactthe laser ridges and form the second electrode of the laser devices. Theridge side contacts are separate and electrically isolated such that thelaser devices may be run independently. Layout C and accompanyingcross-section D show a similar structure, however the laser die arebonded to a metal layer 604 which is electrically isolated from thecarrier wafer by passivation layers 606. A bond pad 605 is overlaid onthe backside of the carrier wafer, providing a means to attach the laserchip to a submount, heat sink, printed circuit board or any otherpackage. In this structure, the carrier wafer need not be conductive.Layout E and accompanying cross section F show a similar structure aslayout C, however the carrier wafer is conductive and serves as a commonelectrode for the laser mesas. A passivation layer is deposited betweenthe carrier and the backside bond pad 605 to electrically isolate thechip from the submount, heat sink, circuit board or other package typeit is installed into.

FIG. 45 shows schematics of the layout of a multi-die laser chipsaccording to an embodiment of this invention. Layout A and accompanyingcross-section B show a laser chip comprised by a singulated piece of acarrier wafer 701, three laser die 702 transferred from epitaxialsubstrates, and metal traces and conductive through vias 703 forelectrically connecting to the die. The through vias penetrate throughthe carrier wafer and may be covered by bond pads which are not shown.The laser die are bonded to the carrier via a common electrode 704,however the ridge side contacts to the laser devices are electricallyisolated from the common electrode metal and are connected to throughvias that are isolated from the common electrode. A passivation layer705 isolates the laser die and common electrode from metal filledthrough vias located beneath the die which provide a region higherthermal conductivity beneath the dies to facilitate heat extraction, butwhich are electrically isolated from laser die. In this embodiment, thecarrier wafer must be electrically insulating.

FIG. 46 shows schematics of the layout and fabrication of a multi-dielaser chip according to an embodiment of this invention. Layout A showsthe chip after bonding of the die, but before singulation andfabrication of the laser devices. Laser die 801 are bonded to thecarrier wafer 804 via bond pads 802. The carrier wafer is electricallyconductive and acts as a common electrode. A bond pad 805 is overlaid onthe backside of the carrier wafer to provide a means of attaching thechip to a heat sink, submount or package, as well as to provide a meansof electrically connecting to the device. A passivation layer 803separates the carrier wafer from conductive layers 807 that makeelectrical contact to devices on individual laser die. A secondpassivation layer 806 is overlaid on the die and a conductive layer isoverlaid on the second passivation layer to provide an electricallyisolated electrical contact to the middle die. This arrangement allowsbond pads to be formed which connect to the entire length of the laserridge while being wide enough to be accessible with wire bonds. Planview C shows part of the array of these devices fabricated on a carrierwafer. Lines 808 and 809 show the locations of cleaves used to singulatethe carrier wafer into individual laser chips as well as form the frontand back facets of the laser devices. Laser skip scribes 810 are used toprovide guides for the cleaves. This configuration would require asingle crystal carrier wafer in order to guide the cleave.

FIG. 47 schematically depicts the energy conversion efficiency vs inputpower density for GaN-based Light Emitting Diodes (LEDs) and LaserDiodes (LD) in an example. The typical operation regime for laser diodesis much higher than for LEDs, indicating that the output power densityfor laser diodes can be much higher than for LEDs. Note that this figurewas taken from reference 2.

FIG. 48 schematically depicts an example of the present invention. Anintegrated, low-cost laser-based light module (3001) is composed of oneor more blue laser diodes (3002) and a wavelength conversion element(3003), attached to a common substrate (3004). Metallic traces (3005)enable electrical interconnections and thermal connection to the commonsubstrate.

FIG. 49 schematically depicts an alternative example of the presentinvention. An integrated, low-cost laser-based light module (3006) iscomposed of one or more blue laser diodes (3002) and a wavelengthconversion element (3003), attached to a common substrate (3004).Metallic traces (3005) enable electrical interconnections and thermalconnection to the common substrate.

FIG. 50 schematically depicts an alternative example of the presentinvention. An integrated, low-cost laser-based light module (3007) iscomposed of one or more blue laser diodes (3002) and a wavelengthconversion element (3003), attached to a common substrate (3004).Metallic traces (3005) enable electrical interconnections and thermalconnection to the common substrate.

FIG. 51 (40) is a schematic cross-sectional view of the integrated,low-cost laser-based light module (3001) in an example. One or more bluelaser diodes (3002) and a wavelength conversion element (3003), attachedto a common substrate (3004). Metallic traces (3005) enable electricalinterconnections. Thermally and electrically conducting attach materials(3009) are used to attach both the laser diodes and the wavelengthconversion element to the common substrate (3004). An optionalreflective element (3010) may be inserted between the wavelengthconversion element and the attach material. An optional electricallyinsulating layer (3011) may be applied to the common substrate if thecommon substrate is electrically conductive.

FIG. 52 schematically depicts an example where the light from the one ormore blue laser diodes (3002) are coupled into the wavelength conversionelement (3003) through an geometric feature (3013). An optional opticalelement (3014) may be utilized to improve the coupling efficiency. Anoptional optically reflecting element (3009) may be attached to thesides of the wavelength conversion element, with a concomitant geometricfeature aligned to the feature (3013).

FIG. 53 schematically depicts an alternative example of the integrated,low-cost laser-based light module (3015), where the common substrate(3004) is optically transparent. The light from the one or more bluelaser diodes (3002) are coupled into the wavelength conversion element(3003) through apertures (3013) in an optional reflective element (3010)which covers the majority of the exposed surfaces of the wavelengthconversion element. An optical exit aperture (3016) allows light to beemitted downward through the transparent common substrate, as depictedby the arrow (3017).

FIG. 54 schematically depicts an integrated lighting apparatus (3019)which includes one or more integrated low-cost, laser-based lightsources (3020), a heat sink (3021), and an optional optical element forshaping or modifying the spectral content of the exiting beam (3022),and an optional integrated electronic power supply (3023) and anoptional electronic connection element (3024) in an example.

As further background for the reader, gallium nitride and relatedcrystals are difficult to produce in bulk form. Growth technologiescapable of producing large area boules of GaN are still in theirinfancy, and costs for all orientations are significantly more expensivethan similar wafer sizes of other semiconductor substrates such as Si,GaAs, and InP. While large area, free-standing GaN substrates (e.g. withdiameters of two inches or greater) are available commercially, they aremore costly than the more conventional, silicon, sapphire, SiC, InP andGaAs substrates.

Given the high cost of gallium and nitrogen containing substrates, thedifficulty in scaling up wafer size, the inefficiencies inherent in theprocessing of small wafers it becomes extremely desirable to maximizeutilization of substrates and epitaxial material. In the fabrication oflateral cavity laser diodes, it is typically the case that minimum dielength is determined by the laser cavity length, but the minimum diewidth is determined by other device components such as wire bonding padsor considerations such as mechanical area for die handling in die attachprocesses. That is, while the laser cavity length limits the laser dielength, the laser die width is typically much larger than the lasercavity width. Since the GaN substrate and epitaxial material are onlycritical in and near the laser cavity region this presents a greatopportunity to invent novel methods to form only the laser cavity regionout of these relatively expensive materials and form the bond pad andmechanical structure of the chip from a lower cost material. Typicaldimensions for laser cavity widths are about 1-30 μm, while wire bondingpads are ˜100 μm wide. This means that if the wire bonding pad widthrestriction and mechanical handling considerations were eliminated fromthe GaN chip dimension between >3 and 100 times more laser diode diecould be fabricated from a single epitaxial wafer. This translates toa >3 to 100 times reduction in epitaxy and substrate costs. Inconventional device designs, the relatively large bonding pads aremechanically supported by the epitaxy wafer, although they make no useof the material properties of the semiconductor beyond structuralsupport.

In an example, the present invention is a method of transferring thesemiconductor material comprising a laser diode from the substrate onwhich it was epitaxially grown to a second substrate, i.e. a carrierwafer. This method allows for one or more AlInGaN or AlInGaP laserdevices to be transferred to a carrier wafer. The transfer of the laserdevices from their original substrates to a carrier wafer offers severaladvantages. The first is maximizing the number of GaN laser deviceswhich can be fabricated from a given epitaxial area on a gallium andnitrogen containing substrate by spreading out the epitaxial material ona carrier wafer such that the wire bonding pads or other structuralelements are mechanically supported by relatively inexpensive carrierwafer, while the light emitting regions remain fabricated from thenecessary epitaxial material. This will drastically reduce the chip costin all gallium and nitrogen based laser diodes.

Another advantage is integration of multiple aspects of theoptoelectronic device normally provided by components other than thelaser diodes into the carrier wafer. For example, the carrier wafermaterial could be chosen such that it could serve as both a mechanicalcarrier for laser device material as well as a submount providing athermally conductive but electrically isolating connection to the laserdevice package and heat sink. This is a key advantage, in that theresulting part, after singulation of individual chips from the carrierwafer, is a fully functional laser light emitting device. Typicallysubmounts are patterned with a solder pad that connects to a wire bondpad. In this sense, the laser die on submount is a simple laser packagethat provides mechanical support and electrical access to the laserdevice and can be considered the fundamental building block of any laserbased light source. By combining the functions of the carrier wafer andthe submount this invention avoids relatively expensive pick-and-placeand assembly steps as well as the cost of a separate submount.

Another advantage is in enabling most of the device fabrication steps tobe carried out on die transferred to a carrier wafer. Because thecarrier wafer size is arbitrary it is possible to choose carrier sizeslarge enough to allow bonding die from multiple substrates to the samecarrier wafer such that the cost of each processing step duringfabrication of the laser devices is shared among vastly more devices,thereby reducing fabrication costs considerably. Moreover, encapsulationsteps can be carried out directly on the carrier wafer, allowing for thefabrication of environmentally sealed laser chips using parallelprocessing methods. The resulting device, either encapsulated or not,would be a laser device in a true chip-scale package.

Another advantage is that this invention transfers the epitaxialmaterial comprising the laser device from the substrate withoutdestroying the substrate, thereby allowing the substrate to be reclaimedand reused for the growth of more devices. In the case when thesubstrate can be reclaimed many times, the effective substrate costquickly approaches the cost of reclaim rather than the cost of theoriginal substrate. For devices such as GaN laser diodes, wheresubstrates are both small and expensive relative to more mature compoundsemiconductor materials, these advantages can lead to dramaticreductions in the cost of fabricating a laser device.

In brief, embodiments of the invention involve an optoelectronic devicewafer composed of device layers overlying the surface region of asubstrate wafer. The substrate material can be GaN, sapphire, SiC, Si,and GaAs, but can be others. The optoelectronic device layers areseparated from the substrate by one or more layers designed to beselectively removable either by dry etching, wet etching ordecomposition due to laser irradiation. A bonding material is depositedon the surface of the optoelectronic device layers. A bonding materialis also deposited either as a blanket coating or patterned on a carrierwafer. Standard lithographic processes are used to mask the device waferwhich is then etched with either dry or wet etch processes to open viasthat expose the sacrificial layer. A selective etch process is used toremove the sacrificial layer while leaving the optoelectronic devicelayers intact. In the case where the selective removal process is a wetetch, a protective passivation layer can be employed to prevent thedevice layers from being exposed to the etch when the etch selectivityis not perfect. The selective removal undercuts the device layers.

Special features of the mask may be used which attach to the undercutdevice layers, but which are too large to themselves be undercut, orwhich due to the design of the mask contain regions where thesacrificial layers are not removed or these features may be composed ofmetals or dielectrics that are resistant to the etch. These features actas anchors, preventing the undercut device layers from detaching fromthe substrate. This partial attachment to the substrate can also beachieved by incompletely removing the sacrificial layer, such that thereis a tenuous connection between the undercut device layers and thesubstrate which can be broken during bonding. The surfaces of thebonding material on the carrier wafer and the device wafer are thenbrought into contact and a bond is formed which is stronger than theattachment of the undercut device layers to the anchors or remainingmaterial of the sacrificial layers. After bonding, the separation of thecarrier and device wafers transfers the device layers to the carrierwafer.

This invention enables fabrication of laser die at very high density ona substrate. This high density being greater than what is practical fora laser device built using current fabrication processes. Laser die aretransferred to a carrier wafer at a larger pitch (e.g. lower density)than they are found on the substrate. The carrier wafer can be made froma less expensive material, or one with material properties that enableusing the carrier as a submount or the carrier wafer can be anengineered wafer including passivation layers and electrical elementsfabricated with standard lithographic processes. Once transferred, thedie can be processed into laser devices using standard lithographicprocesses. The carrier wafer diameter can be chosen such that laser diefrom multiple gallium and nitrogen containing substrates can betransferred to a single carrier and processed into laser devices inparallel using standard lithographic processes.

In a specific embodiment, the gallium nitride substrate member is a bulkGaN substrate characterized by having a polar crystalline surfaceregion, but can be others. In a specific embodiment, the bulk nitrideGaN substrate comprises nitrogen and has a surface dislocation densitybetween about 10E5 cm⁻² and about 10E7 cm⁻² or below 10E5 cm⁻². Thenitride crystal or wafer may comprise Al_(x)In_(y)Ga_(1-x-y)N, where0≤x, y, x+y≤1. In one specific embodiment, the nitride crystal comprisesGaN. In one or more embodiments, the GaN substrate has threadingdislocations, at a concentration between about 10E5 cm⁻² and about 10E8cm⁻², in a direction that is substantially orthogonal or oblique withrespect to the surface. As a consequence of the orthogonal or obliqueorientation of the dislocations, the surface dislocation density isbetween about 10E5 cm⁻² and about 10E7 cm⁻² or below about 10E5 cm⁻². Ina specific embodiment, the device can be fabricated on a slightlyoff-cut polar substrate.

The substrate typically is provided with one or more of the followingepitaxially grown elements, but is not limiting:

-   -   an n-GaN cladding region with a thickness of about 50 nm to        about 6000 nm with a Si or oxygen doping level of about 5E16        cm⁻³ to about 1E19 cm⁻³;    -   an InGaN region of a high indium content and/or thick InGaN        layer(s) or Super SCH region;    -   a higher bandgap strain control region overlying the InGaN        region;    -   optionally, an SCH region overlying the InGaN region;    -   quantum well active region layers comprised of one to five about        1.0-5.5 nm InGaN quantum wells separated by about 1.5-15.0 nm        GaN or InGaN barriers;    -   optionally, a p-side SCH layer comprised of InGaN with molar a        fraction of indium of between about 1% and about 10% and a        thickness from about 15 nm to about 250 nm;    -   an electron blocking layer comprised of AlGaN with molar        fraction of aluminum of between about 5% and about 20% and        thickness from about 10 nm to about 15 nm and doped with Mg;    -   a p-GaN cladding layer with a thickness from about 400 nm to        about 1000 nm with Mg doping level of about 5E17 cm⁻³ to about        1E19 cm⁻³;    -   a p++-GaN contact layer with a thickness from about 20 nm to        about 40 nm with Mg doping level of about 1E20 cm⁻³ to about        1E21 cm⁻³.

Typically each of these regions is formed using at least an epitaxialdeposition technique of metal organic chemical vapor deposition (MOCVD),molecular beam epitaxy (MBE), or other epitaxial growth techniquessuitable for GaN growth. The active region can include one to abouttwenty quantum well regions according to one or more embodiments. As anexample following deposition of the n-type Al_(u)In_(v)Ga_(1-u-v)N layerfor a predetermined period of time, so as to achieve a predeterminedthickness, an active layer is deposited. The active layer may comprise asingle quantum well or a multiple quantum well, with about 2-10 quantumwells. The quantum wells may comprise InGaN wells and GaN barrierlayers. In other embodiments, the well layers and barrier layerscomprise Al_(w)In_(x)Ga_(1-w-x)N and Al_(y)In_(z)Ga_(1-y-z)N,respectively, where 0≤w, x, y, z, w+x, y+z≤1, where w<u, y and/or x>v, zso that the bandgap of the well layer(s) is less than that of thebarrier layer(s) and the n-type layer. The well layers and barrierlayers may each have a thickness between about 1 nm and about 15 nm. Inanother embodiment, the active layer comprises a double heterostructure,with an InGaN or AlwInxGa1-w-xN layer about 10 nm to about 100 nm thicksurrounded by GaN or Al_(y)In_(z)Ga_(1-y-z)N layers, where w<u, y and/orx>v, z. The composition and structure of the active layer are chosen toprovide light emission at a preselected wavelength. The active layer maybe left undoped (or unintentionally doped) or may be doped n-type orp-type.

The active region can also include an electron blocking region, and aseparate confinement heterostructure. In some embodiments, an electronblocking layer is preferably deposited. The electron-blocking layer maycomprise Al_(s)In_(t)Ga_(1-s-t)N, where 0≤s, t, s+t≤1, with a higherbandgap than the active layer, and may be doped p-type or the electronblocking layer comprises an AlGaN/GaN super-lattice structure,comprising alternating layers of AlGaN and GaN. Alternatively, there maybe no electron blocking layer. As noted, the p-type gallium nitridestructure, is deposited above the electron blocking layer and activelayer(s). The p-type layer may be doped with Mg, to a level betweenabout 10E16 cm-3 and about 10E22 cm-3, and may have a thickness betweenabout 5 nm and about 1000 nm. The outermost 1-50 nm of the p-type layermay be doped more heavily than the rest of the layer, so as to enable animproved electrical contact.

FIG. 4 is a simplified schematic cross-sectional diagram illustrating astate of the art GaN laser diode structure. This diagram is merely anexample, which should not unduly limit the scope of the claims herein.One of ordinary skill in the art would recognize other variations,modifications, and alternatives in light of the present disclosure. Asshown, the laser device includes gallium nitride substrate 203, whichhas an underlying n-type metal back contact region 201. In anembodiment, the metal back contact region is made of a suitable materialsuch as those noted below and others. Further details of the contactregion can be found throughout the present specification and moreparticularly below.

In an embodiment, the device also has an overlying n-type galliumnitride layer 205, an active region 207, and an overlying p-type galliumnitride layer structured as a laser stripe region 211. Additionally, thedevice also includes an n-side separate confinement hetereostructure(SCH) 206, p-side guiding layer or SCH 208, p-AlGaN EBL 209, among otherfeatures. In an embodiment, the device also has a p++ type galliumnitride material 213 to form a contact region. In an embodiment, the p++type contact region has a suitable thickness and may range from about 10nm to about 50 nm, or other thicknesses. In an embodiment, the dopinglevel can be higher than the p-type cladding region and/or bulk region.In an embodiment, the p++ type region has doping concentration rangingfrom about 10¹⁹ to 10²¹ Mg/cm³, and others. The p++ type regionpreferably causes tunneling between the semiconductor region andoverlying metal contact region. In an embodiment, each of these regionsis formed using at least an epitaxial deposition technique of metalorganic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE),or other epitaxial growth techniques suitable for GaN growth. In anembodiment, the epitaxial layer is a high quality epitaxial layeroverlying the n-type gallium nitride layer. In some embodiments the highquality layer is doped, for example, with Si or O to form n-typematerial, with a dopant concentration between about 10¹⁶ cm⁻³ and about10²⁰ cm⁻³.

The device has a laser stripe region formed overlying a portion of theoff-cut crystalline orientation surface region. As example, FIG. 3 is asimplified schematic diagram of polar c-plane laser diode with thecavity aligned in the m-direction with cleaved or etched mirrors. Thelaser stripe region is characterized by a cavity orientationsubstantially in an m-direction, which is substantially normal to ana-direction, but can be others such as cavity alignment substantially inthe a-direction. The laser strip region has a first end 107 and a secondend 109 and is formed on an m-direction on a {0001} gallium and nitrogencontaining substrate having a pair of cleaved mirror structures, whichface each other. The first cleaved facet comprises a reflective coatingand the second cleaved facet comprises no coating, an antireflectivecoating, or exposes gallium and nitrogen containing material. The firstcleaved facet is substantially parallel with the second cleaved facet.The first and second cleaved facets are provided by a scribing andbreaking process according to an embodiment or alternatively by etchingtechniques using etching technologies such as reactive ion etching(RIE), inductively coupled plasma etching (ICP), or chemical assistedion beam etching (CAIBE), or other method. The first and second mirrorsurfaces each comprise a reflective coating. The coating is selectedfrom silicon dioxide, hafnia, and titania, tantalum pentoxide, zirconia,including combinations, and the like. Depending upon the design, themirror surfaces can also comprise an anti-reflective coating.

In a specific embodiment, the method of facet formation includessubjecting the substrates to a laser for pattern formation. In apreferred embodiment, the pattern is configured for the formation of apair of facets for one or more ridge lasers. In a preferred embodiment,the pair of facets face each other and are in parallel alignment witheach other. In a preferred embodiment, the method uses a UV (355 nm)laser to scribe the laser bars. In a specific embodiment, the laser isconfigured on a system, which allows for accurate scribe linesconfigured in one or more different patterns and profiles. In one ormore embodiments, the laser scribing can be performed on the back-side,front-side, or both depending upon the application. Of course, there canbe other variations, modifications, and alternatives.

In a specific embodiment, the method uses backside laser scribing or thelike. With backside laser scribing, the method preferably forms acontinuous line laser scribe that is perpendicular to the laser bars onthe backside of the GaN substrate. In a specific embodiment, the laserscribe is generally about 15-20 um deep or other suitable depth.Preferably, backside scribing can be advantageous. That is, the laserscribe process does not depend on the pitch of the laser bars or otherlike pattern. Accordingly, backside laser scribing can lead to a higherdensity of laser bars on each substrate according to a preferredembodiment. In a specific embodiment, backside laser scribing, however,may lead to residue from the tape on one or more of the facets. In aspecific embodiment, backside laser scribe often requires that thesubstrates face down on the tape. With front-side laser scribing, thebackside of the substrate is in contact with the tape. Of course, therecan be other variations, modifications, and alternatives.

Laser scribe Pattern: The pitch of the laser mask is about 200 um, butcan be others. In an embodiment the method uses a 170 um scribe with a30 um dash for the 200 um pitch. In a preferred embodiment, the scribelength is maximized or increased while maintaining the heat affectedzone of the laser away from the laser ridge, which is sensitive to heat.

Laser scribe Profile: A saw tooth profile generally produces minimalfacet roughness. It is believed that the saw tooth profile shape createsa very high stress concentration in the material, which causes thecleave to propagate much easier and/or more efficiently.

In a specific embodiment, the method of facet formation includessubjecting the substrates to mechanical scribing for pattern formation.In a preferred embodiment, the pattern is configured for the formationof a pair of facets for one or more ridge lasers. In a preferredembodiment, the pair of facets face each other and are in parallelalignment with each other. In a preferred embodiment, the method uses adiamond tipped scribe to physically scribe the laser bars, though aswould be obvious to anyone learned in the art a scribe tipped with anymaterial harder than GaN would be adequate. In a specific embodiment,the laser is configured on a system, which allows for accurate scribelines configured in one or more different patterns and profiles. In oneor more embodiments, the mechanical scribing can be performed on theback-side, front-side, or both depending upon the application. Ofcourse, there can be other variations, modifications, and alternatives.

In a specific embodiment, the method uses backside scribing or the like.With backside mechanical scribing, the method preferably forms acontinuous line scribe that is perpendicular to the laser bars on thebackside of the GaN substrate. In a specific embodiment, the laserscribe is generally about 15-20 um deep or other suitable depth.Preferably, backside scribing can be advantageous. That is, themechanical scribe process does not depend on the pitch of the laser barsor other like pattern. Accordingly, backside scribing can lead to ahigher density of laser bars on each substrate according to a preferredembodiment. In a specific embodiment, backside mechanical scribing,however, may lead to residue from the tape on one or more of the facets.In a specific embodiment, backside mechanical scribe often requires thatthe substrates face down on the tape. With front-side mechanicalscribing, the backside of the substrate is in contact with the tape. Ofcourse, there can be other variations, modifications, and alternatives.

It is well known that etch techniques such as chemical assisted ion beametching (CAIBE), inductively coupled plasma (ICP) etching, or reactiveion etching (RIE) can result in smooth and vertical etched sidewallregions, which could serve as facets in etched facet laser diodes. Inthe etched facet process a masking layer is deposited and patterned onthe surface of the wafer. The etch mask layer could be comprised ofdielectrics such as silicon dioxide (SiO2), silicon nitride (SixNy), acombination thereof or other dielectric materials. Further, the masklayer could be comprised of metal layers such as Ni or Cr, but could becomprised of metal combination stacks or stacks comprising metal anddielectrics. In another approach, photoresist masks can be used eitheralone or in combination with dielectrics and/or metals. The etch masklayer is patterned using conventional photolithography and etch steps.The alignment lithography could be performed with a contact aligner orstepper aligner. Such lithographically defined mirrors provide a highlevel of control to the design engineer. After patterning of thephotoresist mask on top of the etch mask is complete, the patterns inthen transferred to the etch mask using a wet etch or dry etchtechnique. Finally, the facet pattern is then etched into the waferusing a dry etching technique selected from CAIBE, ICP, RIE and/or othertechniques. The etched facet surfaces must be highly vertical of betweenabout 87 and about 93 degrees or between about 89 and about 91 degreesfrom the surface plane of the wafer. The etched facet surface regionmust be very smooth with root mean square roughness values of less thanabout 50 nm, 20 nm, 5 nm, or 1 nm. Lastly, the etched must besubstantially free from damage, which could act as nonradiativerecombination centers and hence reduce the COMD threshold. CAIBE isknown to provide very smooth and low damage sidewalls due to thechemical nature of the etch, while it can provide highly vertical etchesdue to the ability to tilt the wafer stage to compensate for anyinherent angle in etch.

The laser stripe is characterized by a length and width. The lengthranges from about 50 microns to about 3000 microns, but is preferablybetween about 10 microns and about 400 microns, between about 400microns and about 800 microns, or about 800 microns and about 1600microns, but could be others. The stripe also has a width ranging fromabout 0.5 microns to about 50 microns, but is preferably between about0.8 microns and about 2.5 microns for single lateral mode operation orbetween about 2.5 um and about 35 um for multi-lateral mode operation,but can be other dimensions. In a specific embodiment, the presentdevice has a width ranging from about 0.5 microns to about 1.5 microns,a width ranging from about 1.5 microns to about 3.0 microns, a widthranging from about 3.0 microns to about 35 microns, and others. In aspecific embodiment, the width is substantially constant in dimension,although there may be slight variations. The width and length are oftenformed using a masking and etching process, which are commonly used inthe art.

The laser stripe is provided by an etching process selected from dryetching or wet etching. The device also has an overlying dielectricregion, which exposes a p-type contact region. Overlying the contactregion is a contact material, which may be metal or a conductive oxideor a combination thereof. The p-type electrical contact may be depositedby thermal evaporation, electron beam evaporation, electroplating,sputtering, or another suitable technique. Overlying the polished regionof the substrate is a second contact material, which may be metal or aconductive oxide or a combination thereof and which comprises the n-typeelectrical contact. The n-type electrical contact may be deposited bythermal evaporation, electron beam evaporation, electroplating,sputtering, or another suitable technique.

Given the high gallium and nitrogen containing substrate costs,difficulty in scaling up gallium and nitrogen containing substrate size,the inefficiencies inherent in the processing of small wafers, andpotential supply limitations it becomes extremely desirable to maximizeutilization of available gallium and nitrogen containing substrate andoverlying epitaxial material. In the fabrication of lateral cavity laserdiodes, it is typically the case that minimum die size is determined bydevice components such as the wire bonding pads or mechanical handlingconsiderations, rather than by laser cavity widths. Minimizing die sizeis critical to reducing manufacturing costs as smaller die sizes allow agreater number of devices to be fabricated on a single wafer in a singleprocessing run. The current invention is a method of maximizing thenumber of devices which can be fabricated from a given gallium andnitrogen containing substrate and overlying epitaxial material byspreading out the epitaxial material onto a carrier wafer via a dieexpansion process.

With respect to AlInGaAsP laser devices, these devices include asubstrate made of GaAs or Ge, but can be others. As used herein, theterm “substrate” can mean the bulk substrate or can include overlyinggrowth structures such as arsenic or phosphorus containing epitaxialregion, or functional regions such as n-type AlGaAs, combinations, andthe like. The devices have material overlying the substrate composed ofGaAs, AlAs, AlGaAs, InGaAS, InGaP, AlInGaP, AlInGaAs or AlInGaAsP.Typically each of these regions is formed using at least an epitaxialdeposition technique of metal organic chemical vapor deposition (MOCVD),molecular beam epitaxy (MBE), or other epitaxial growth techniquessuitable for AlInGaAsP growth. In general these devices have an n-typeand p-type conducting layer which may form part of a n-type claddinglayer or p-type cladding layer, respectively, with lower refractiveindex than the light emitting active region. The n-cladding layers canbe composed of an alloy of AlInGaAsP containing aluminum. The devicescontain an active region which emits light during operation of thedevice. The active region may have one or more quantum wells of lowerbandgap than surrounding quantum barriers. Separate confinementheterostructures (SCHs) may be included with refractive index higherthan the cladding layers to improve confinement of the optical modes.SCHs and quantum wells are typically composed of InGaP, AlInGaP orInGaAsP, but may be other materials.

The device has a laser stripe region formed overlying a portion ofsurface region. The laser strip region has a first end and a second end,having a pair of cleaved mirror structures, which face each other. Thefirst cleaved facet comprises a reflective coating and the secondcleaved facet comprises no coating, an antireflective coating, orexposes As or P containing material. The first cleaved facet issubstantially parallel with the second cleaved facet. The first andsecond cleaved facets are provided by a scribing and breaking processaccording to an embodiment or alternatively by etching techniques usingetching technologies such as reactive ion etching (RIE), inductivelycoupled plasma etching (ICP), or chemical assisted ion beam etching(CAIBE), or other method. The first and second mirror surfaces eachcomprise a reflective coating. The coating is selected from silicondioxide, hafnia, and titania, tantalum pentoxide, zirconia, includingcombinations, and the like. Depending upon the design, the mirrorsurfaces can also comprise an anti-reflective coating.

In a specific embodiment, the method of facet formation includessubjecting the substrates to a laser for pattern formation. In apreferred embodiment, the pattern is configured for the formation of apair of facets for one or more ridge lasers. In a preferred embodiment,the pair of facets face each other and are in parallel alignment witheach other. In a preferred embodiment, the method uses a UV (355 nm)laser to scribe the laser bars. In a specific embodiment, the laser isconfigured on a system, which allows for accurate scribe linesconfigured in one or more different patterns and profiles. In one ormore embodiments, the laser scribing can be performed on the back-side,front-side, or both depending upon the application. Of course, there canbe other variations, modifications, and alternatives.

In a specific embodiment, the method uses backside laser scribing or thelike. With backside laser scribing, the method preferably forms acontinuous line laser scribe that is perpendicular to the laser bars onthe backside of the substrate. In a specific embodiment, the laserscribe is generally about 15-20 um deep or other suitable depth.Preferably, backside scribing can be advantageous. That is, the laserscribe process does not depend on the pitch of the laser bars or otherlike pattern. Accordingly, backside laser scribing can lead to a higherdensity of laser bars on each substrate according to a preferredembodiment. In a specific embodiment, backside laser scribing, however,may lead to residue from the tape on one or more of the facets. In aspecific embodiment, backside laser scribe often requires that thesubstrates face down on the tape. With front-side laser scribing, thebackside of the substrate is in contact with the tape. Of course, therecan be other variations, modifications, and alternatives.

In a specific embodiment, the method of facet formation includessubjecting the substrates to mechanical scribing for pattern formation.In a preferred embodiment, the pattern is configured for the formationof a pair of facets for one or more ridge lasers. In a preferredembodiment, the pair of facets face each other and are in parallelalignment with each other. In a preferred embodiment, the method uses adiamond tipped scribe to physically scribe the laser bars, though aswould be obvious to anyone learned in the art a scribe tipped with anymaterial harder than GaN would be adequate. In a specific embodiment,the laser is configured on a system, which allows for accurate scribelines configured in one or more different patterns and profiles. In oneor more embodiments, the mechanical scribing can be performed on theback-side, front-side, or both depending upon the application. Ofcourse, there can be other variations, modifications, and alternatives.

In a specific embodiment, the method uses backside scribing or the like.With backside mechanical scribing, the method preferably forms acontinuous line scribe that is perpendicular to the laser bars on thebackside of the substrate. In a specific embodiment, the laser scribe isgenerally about 15-20 um deep or other suitable depth. Preferably,backside scribing can be advantageous. That is, the mechanical scribeprocess does not depend on the pitch of the laser bars or other likepattern. Accordingly, backside scribing can lead to a higher density oflaser bars on each substrate according to a preferred embodiment. In aspecific embodiment, backside mechanical scribing, however, may lead toresidue from the tape on one or more of the facets. In a specificembodiment, backside mechanical scribe often requires that thesubstrates face down on the tape. With front-side mechanical scribing,the backside of the substrate is in contact with the tape. Of course,there can be other variations, modifications, and alternatives.

It is well known that etch techniques such as chemical assisted ion beametching (CAIBE), inductively coupled plasma (ICP) etching, or reactiveion etching (RIE) can result in smooth and vertical etched sidewallregions, which could serve as facets in etched facet laser diodes. Inthe etched facet process a masking layer is deposited and patterned onthe surface of the wafer. The etch mask layer could be comprised ofdielectrics such as silicon dioxide (SiO2), silicon nitride (SixNy), acombination thereof or other dielectric materials. Further, the masklayer could be comprised of metal layers such as Ni or Cr, but could becomprised of metal combination stacks or stacks comprising metal anddielectrics. In another approach, photoresist masks can be used eitheralone or in combination with dielectrics and/or metals. The etch masklayer is patterned using conventional photolithography and etch steps.The alignment lithography could be performed with a contact aligner orstepper aligner. Such lithographically defined mirrors provide a highlevel of control to the design engineer. After patterning of thephotoresist mask on top of the etch mask is complete, the patterns inthen transferred to the etch mask using a wet etch or dry etchtechnique. Finally, the facet pattern is then etched into the waferusing a dry etching technique selected from CAIBE, ICP, RIE and/or othertechniques. The etched facet surfaces must be highly vertical of betweenabout 87 and about 93 degrees or between about 89 and about 91 degreesfrom the surface plane of the wafer. The etched facet surface regionmust be very smooth with root mean square roughness values of less thanabout 50 nm, 20 nm, 5 nm, or 1 nm. Lastly, the etched must besubstantially free from damage, which could act as nonradiativerecombination centers and hence reduce the COMD threshold. CAIBE isknown to provide very smooth and low damage sidewalls due to thechemical nature of the etch, while it can provide highly vertical etchesdue to the ability to tilt the wafer stage to compensate for anyinherent angle in etch.

The laser stripe is characterized by a length and width. The lengthranges from about 50 microns to about 3000 microns, but is preferablybetween about 10 microns and about 400 microns, between about 400microns and about 800 microns, or about 800 microns and about 1600microns, but could be others. The stripe also has a width ranging fromabout 0.5 microns to about 50 microns, but is preferably between about0.8 microns and about 2.5 microns for single lateral mode operation orbetween about 2.5 um and about 35 um for multi-lateral mode operation,but can be other dimensions. In a specific embodiment, the width issubstantially constant in dimension, although there may be slightvariations. The width and length are often formed using a masking andetching process, which are commonly used in the art.

The laser stripe is provided by an etching process selected from dryetching or wet etching. The device also has an overlying dielectricregion, which exposes a p-type contact region. Overlying the contactregion is a contact material, which may be metal or a conductive oxideor a combination thereof. The p-type electrical contact may be depositedby thermal evaporation, electron beam evaporation, electroplating,sputtering, or another suitable technique. Overlying the polished regionof the substrate is a second contact material, which may be metal or aconductive oxide or a combination thereof and which comprises the n-typeelectrical contact. The n-type electrical contact may be deposited bythermal evaporation, electron beam evaporation, electroplating,sputtering, or another suitable technique.

This invention requires selective removal of one or more of theepitaxial layers to allow lift-off of the laser device layers. All ofthe epitaxial layers in the typical device structures described aboveare typically of use in the final device such that none may be removedfrom the structure. A sacrificial layer in most cases must be added tothe epitaxial structure. This layer is one that has the properties of a)can be etched selectively relative to the adjacent layers in theepitaxial structure, b) can be grown in such a way that it does notinduce defects in the device layers that negatively impact performanceand c) can be grown between the functional device layers and thesubstrate such that selective removal of the sacrificial layer willresult in undercutting of the device layers. In some embodiments thesacrificial layer will be a layer that would be normally found in theepitaxial structure. For example, when using laser lift-off toselectively remove material in an optoelectronic device grown onsapphire, the sacrificial layer might be the nitride material adjacentto the sapphire epitaxial surface. In some embodiments the sacrificiallayer might be produced by selectively modifying a portion of a layernormally found in the device. For example, one might induce a n-type GaNlayer to be selectively etchable at a specific depth via awell-controlled ion implantation process.

One embodiment for the fabrication of undercut GaN based laser diodes isdepicted in FIG. 6. This embodiment uses a bandgap selectivephoto-electrical chemical (PEC) etch to undercut an array of mesasetched into the epitaxial layers. The preparation of the epitaxy waferis shown in FIG. 6. This process requires the inclusion of a buriedsacrificial region, which can be PEC etched selectively by bandgap. ForGaN based optoelectronic devices, InGaN quantum wells have been shown tobe an effective sacrificial region during PEC etching.^(1,2) The firststep depicted in FIG. 6 is a top down etch to expose the sacrificiallayers, followed by a bonding metal deposition as shown in FIG. 6. Withthe sacrificial region exposed a bandgap selective PEC etch is used toundercut the mesas. In one embodiment, the bandgaps of the sacrificialregion and all other layers are chosen such that only the sacrificialregion will absorb light, and therefor etch, during the PEC etch.Another embodiment of the invention uses a sacrificial region with ahigher bandgap than the active region such that both layers areabsorbing during the bandgap PEC etching process. In this embodiment,the active region can be prevented from etching during the bandgapselective PEC etch using an insulating protective layer on the sidewall,as shown in FIG. 8. The first step depicted in FIG. 8 is an etch toexpose the active region of the device. This step is followed by thedeposition of a protective insulating layer on the mesa sidewalls, whichserves to block PEC etching of the active region during the latersacrificial region undercut PEC etching step. A second top down etch isthen performed to expose the sacrificial layers and bonding metal isdeposited as shown in FIG. 8. With the sacrificial region exposed abandgap selective PEC etch is used to undercut the mesas. At this point,the selective area bonding process shown in FIG. 7 is used to continuefabricating devices. In another embodiment the active region is exposedby the dry etch and the active region and sacrificial regions bothabsorb the pump light. A conductive path is fabricated between thep-type and n-type cladding surrounding the active region. As in a solarcell, carriers are swept from the active region due to the electricfield in the depletion region. By electrically connecting the n-type andp-type layers together holes can be continually swept from the activeregion, slowing or preventing PEC etching.

Undercut AlInGaAsP based laser diodes can be produced in a mannersimilar to GaN based laser diodes. There are a number of wet etches thatetch some AlInGaAsP alloys selectively.⁷ In one embodiment, an AlGaAs orAlGaP sacrificial layer could be grown clad with GaAs etch stop layers.When the composition of Al_(x)Ga_(1-x) As and Al_(x)Ga_(1-x)P is high(x>0.5) AlGaAs can be etched with almost complete selectivity (i.e. etchrate of AlGaAs>1E6 times that of GaAs) when etched with HF. InGaP andAlInP with high InP and AlP compositions can be etched with HClselectively relative to GaAs. GaAs can be etched selectively relative toAlGaAs using C₆H₈O₇:H₂O₂:H₂O. There are a number of other combinationsof sacrificial layer, etch-stop layer and etch chemistry which arewidely known to those knowledgeable in the art of micromachiningAlInGaAsP alloys.

In one embodiment, the AlInGaAsP device layers are exposed to the etchsolution which is chosen along with the sacrificial layer compositionsuch that only the sacrificial layers experience significant etching.The active region can be prevented from etching during thecompositionally selective etch using an etch resistant protective layer,such as like silicon dioxide, silicon nitride, metals or photoresistamong others, on the sidewall, as shown in FIG. 8. The first stepdepicted in FIG. 8 is an etch to expose the active region of the device.This step is followed by the deposition of a protective insulating layeron the mesa sidewalls, which serves to block etching of the activeregion during the later sacrificial region undercut etching step. Asecond top down etch is then performed to expose the sacrificial layersand bonding metal is deposited as shown in FIG. 8. With the sacrificialregion exposed a compositionally selective etch is used to undercut themesas. At this point, the selective area bonding process shown in FIG. 7is used to continue fabricating devices. The device layers should beseparated from the sacrificial layers by a layer of material that isresistant to etching. This is to prevent etching into the device layersafter partially removing the sacrificial layers.

A top down view of one preferred embodiment of the die expansion processis depicted in FIG. 5. The starting materials are patterned epitaxy andcarrier wafers. Herein, the ‘epitaxy wafer’ or ‘epitaxial wafer’ isdefined as the original gallium and nitrogen containing wafer on whichthe epitaxial material making up the active region was grown, while the‘carrier wafer’ is defined as a wafer to which epitaxial layers aretransferred for convenience of processing. The carrier wafer can bechosen based on any number of criteria including but not limited tocost, thermal conductivity, thermal expansion coefficients, size,electrical conductivity, optical properties, and processingcompatibility. The patterned epitaxy wafer is prepared in such a way asto allow subsequent selective release of bonded epitaxy regions. Thepatterned carrier wafer is prepared such that bond pads are arranged inorder to enable the selective area bonding process. These wafers can beprepared by a variety of process flows, some embodiments of which aredescribed below. In the first selective area bond step, the epitaxywafer is aligned with the pre-patterned bonding pads on the carrierwafer and a combination of pressure, heat, and/or sonication is used tobond the mesas to the bonding pads. The bonding material can be avariety of media including but not limited to metals, polymers, waxes,and oxides. Only epitaxial die which are in contact with a bond bad onthe carrier wafer will bond. Sub-micron alignment tolerances arepossible on commercial die bonders. The epitaxy wafer is then pulledaway, breaking the epitaxy material at a weakened epitaxial releaselayer such that the desired epitaxial layers remain on the carrierwafer. Herein, a ‘selective area bonding step’ is defined as a singleiteration of this process. In the example depicted in FIG. 5, onequarter of the epitaxial die are transferred in this first selectivebond step, leaving three quarters on the epitaxy wafer. The selectivearea bonding step is then repeated to transfer the second quarter, thirdquarter, and fourth quarter of the epitaxial die to the patternedcarrier wafer. This selective area bond may be repeated any number oftimes and is not limited to the four steps depicted in FIG. 5. Theresult is an array of epitaxial die on the carrier wafer with a widerdie pitch than the original die pitch on the epitaxy wafer. The diepitch on the epitaxial wafer will be referred to as pitch 1, and the diepitch on the carrier wafer will be referred to as pitch 2, where pitch 2is greater than pitch 1. At this point standard laser diode processescan be carried out on the carrier wafer. Side profile views of devicesfabricated with state of the art methods and the methods described inthe current invention are depicted in FIG. 1 and FIGS. 2a-2b ,respectively. The device structure enabled by the current invention onlycontains the relatively expensive epitaxy material where the opticalcavity requires it, and has the relatively large bonding pads and/orother device components resting on a carrier wafer. Typical dimensionsfor laser ridge widths and bonding pads are <about 30 μm and > about 100μm, respectively, allowing for three or more times improved epitaxyusage efficiency with the current invention.

Gold-gold metallic bonding is used as an example in this work, althougha wide variety of oxide bonds, polymer bonds, wax bonds etc. arepotentially suitable. Submicron alignment tolerances are possible usingcommercial available die bonding equipment. The carrier wafer ispatterned in such a way that only selected mesas come in contact withthe metallic bond pads on the carrier wafer. When the epitaxy substrateis pulled away the bonded mesas break off at the weakened sacrificialregion, while the un-bonded mesas remain attached to the epitaxysubstrate. This selective area bonding process can then be repeated totransfer the remaining mesas in the desired configuration. This processcan be repeated through any number of iterations and is not limited tothe two iterations depicted in FIG. 7. The carrier wafer can be of anysize, including but not limited to about 2 inch, 3 inch, 4 inch, 6 inch,8 inch, and 12 inch. After all desired mesas have been transferred, asecond bandgap selective PEC etch can be optionally used to remove anyremaining sacrificial region material to yield smooth surfaces. At thispoint standard laser diode processes can be carried out on the carrierwafer. Another embodiment of the invention incorporates the fabricationof device components on the dense epitaxy wafers before the selectivearea bonding steps. In the embodiment depicted in FIG. 9 the laserridge, sidewall passivation, and contact metal are fabricated on theoriginal epitaxial wafer before the die expansion process. This processflow is given for example purposes only and is not meant to limit whichdevice components can be processed before the die expansion process.This work flow has potential cost advantages since additional steps areperformed on the higher density epitaxial wafer before the die expansionprocess. A detailed schematic of this process flow is depicted in FIG.9.

In another embodiment of the invention individual PEC undercut etchesare used after each selective bonding step for etching away thesacrificial release layer of only bonded mesas. Which epitaxial die getundercut is controlled by only etching down to expose the sacrificiallayer of mesas which are to be removed on the current selective bondingstep. The advantage of this embodiment is that only a very coarsecontrol of PEC etch rates is required. This comes at the cost ofadditional processing steps and geometry constrains.

In another embodiment of the invention the bonding layers can be avariety of bonding pairs including metal-metal, oxide-oxide, solderingalloys, photoresists, polymers, wax, etc.

In another embodiment of the invention the sacrificial region iscompletely removed by PEC etching and the mesa remains anchored in placeby any remaining defect pillars. PEC etching is known to leave intactmaterial around defects which act as recombination centers.^(2,3)Additional mechanisms by which a mesa could remain in place after acomplete sacrificial etch include static forces or Van der Waals forces.In one embodiment the undercutting process is controlled such that thesacrificial layer is not fully removed. The remaining thin strip ofmaterial anchors the device layers to the substrate as shown in FIG. 7.

In another embodiment of the invention a shaped sacrificial regionexpose mesa is etched to leave larger regions (anchors) near the ends ofeach epitaxy die. Bonding metal is placed only on the regions of epitaxythat are to be transferred. A selective etch is then performed such thatthe epitaxy die to be transferred is completely undercut while thelarger regions near the end are only partially undercut. The intactsacrificial regions at the ends of the die provide mechanical stabilitythrough the selective area bonding step. As only a few nanometers ofthickness will be undercut, this geometry should be compatible withstandard bonding processes. After the selective area bonding step, theepitaxy and carrier wafers are mechanically separated, cleaving at theweak points between the bond metal and intact sacrificial regions.Example schematics of this process are depicted in FIGS. 10 and 11.Alternatively, the mechanical separation can be realized with sawing. Asan example, a diamond saw blade could be used. After the desired numberof repetitions is completed, state of the art laser diode fabricationprocedures can be applied to the die expanded carrier wafer.

In another embodiment the anchors are positioned either at the ends orsides of the undercut die such that they are connected by a narrowundercut region of material. FIG. 10 shows this configuration as the“peninsular” anchor. The narrow connecting material 304 is far from thebond metal and is design such that the undercut material cleaves at theconnecting material rather than across the die. This has the advantageof keeping the entire width of the die undamaged, which would beadvantageous. In another embodiment, geometric features are added to theconnecting material to act as stress concentrators 305 and the bondmetal is extended onto the narrow connecting material. The bond metalreinforces the bulk of the connecting material. Adding these featuresincreases the control over where the connection will cleave. Thesefeatures can be triangles, circles, rectangles or any deviation thatprovides a narrowing of the connecting material or a concave profile tothe edge of the connecting material.

In another embodiment the anchors are of small enough lateral extentthat they may be undercut, however a protective coating is used toprevent etch solution from accessing the sacrificial layers in theanchors. This embodiment is advantageous in cases when the width of thedie to be transferred is large. Unprotected anchors would need to belarger to prevent complete undercutting, which would reduce the densityof die and reduce the utilization efficiency of epitaxial material.

In another embodiment, the anchors are located at the ends of the dieand the anchors form a continuous strip of material that connects to allor a plurality of die. This configuration is advantageous since theanchors can be patterned into the material near the edge of wafers orlithographic masks where material utilization is otherwise poor. Thisallows for utilization of device material at the center of the patternto remain high even when die sizes become large.

In another embodiment the anchors are formed by depositing regions of anetch-resistant material that adheres well to the epitaxial and substratematerial. These regions overlay a portion of the laser die and someportion of the structure that will not be undercut during the etch.These regions form a continuous connection, such that after the laserdie is completely undercut they provide a mechanical support preventingthe laser die from detaching from the substrate. For example, a laserdie with a length of about 1.2 mm and a width of about 40 micrometers isetched such that the sacrificial region is exposed. Metal layers arethen deposited on the top of the laser die, the sidewall of the laserdie and the bottom of the etched region surrounding the die such that acontinuous connection is formed. As an example, the metal layers couldcomprise about 20 nm of titanium to provide good adhesion and be cappedwith about 500 nm of gold, but of course the choice of metal and thethicknesses could be others. The length of laser die sidewall coated inmetal is about 1 nm to about 40 nm, with the upper thickness being lessthan the width of the laser die such that the sacrificial layer isetched completely in the region near the metal anchor where access tothe sacrificial layer by etchant will be limited.

The use of metal anchors as shown in FIGS. 11a, 11b, and 11c haveseveral advantages over the use of anchors made from the epitaxialdevice material. The first is density of the transferrable mesas on thedonor epitaxial wafer. Anchors made from the epitaxial material must belarge enough to not be fully undercut by the selective etch, or theymust be protected somehow with a passivating layer. The inclusion of alarge feature that is not transferred will reduce the density of mesasin one or more dimensions on the epitaxial device wafer. The use ofmetal anchors is preferable because the anchors are made from a materialthat is resistant to etch and therefore can be made with smalldimensions that do not impact mesa density. The second advantage is thatit simplifies the processing of the mesas because a separate passivatinglayer is no longer needed to isolate the active region from the etchsolution. Removing the active region protecting layer reduces the numberof fabrication steps while also reducing the size of the mesa required.

In an example, the mesa is first produced via deposition of a patternedmask and an etch such that the etch exposes a highly n-type doped layerbeneath the sacrificial layer. The highly n-type doped layer is doped toa carrier concentration of between 1E18 and 1E20 cm-3. The highly n-typelayer is incorporated into the structure during epitaxial growth andallows for a highly ohmic and low resistance electrical contact betweenthe cathode metal and the n-type cladding. At the top of the mesa is ap-contact layer consisting of a highly p-type doped GaN, InGaN orAlInGaN layer which provides for an ohmic and low resistance electricalcontact between the anode metal and the p-type cladding. The p-contactmetal can be one or more of Ni, Pd, Pt, Ag among other metals. Thep-contact can also be formed using a transparent conducting oxide (TCO)such as ZnO or zinc oxide alloyed with one or more of Cd, Mg, Al, Ga,In. Other possible transparent conductive oxides include indium tinoxide (ITO) and gallium oxide, among others. The p-contact metal or TCOcan be deposited either before or after etching of the mesa. The cathodemetal stack is then deposited, and consists of a first layer of a metalthat will form a good electrical contact to n-type material. This wouldinclude Ti, Al and Ni among others. The cathode metal stack may alsoinclude metal layer specifically for promoting adhesion. The final layerin the cathode stack should be one or more of Au, Pt or Pd among othermetals that promote efficient transfer of electrons into the etchsolution. Most preferably the cathode metal is Pt as this provides thefastest etch rates. In a particular embodiment, the thick gold bondmetal on top of the mesa, the metal anchors connecting the bond metal tothe cathode metal and the cathode metal stack are deposited in one step.This has the advantage of reducing the number of steps required tofabricate the device, however a compromise is made in the selective etchbecause while gold is the ideal metal for forming the metal-metalthermo-compressive bond during mesa transfer, the gold is a lesspreferred cathode metal than platinum and will result in lower etchrates for any given cathode area.

In a particular embodiment, the cathode metal stack also includes metallayers intended to increase the strength of the metal anchors. Forexample the cathode metal stack might consist of 100 nm of Ti to promoteadhesion of the cathode metal stack and provide a good electricalcontact to the n-type cladding. The cathode metal stack could thenincorporate a layer of tungsten, which has an elastic modulus on theorder of four times higher than gold. Incorporating the tungsten wouldreduce the thickness of gold required to provide enough mechanicalsupport to retain the mesas after they are undercut by the selectiveetch.

In another embodiment of the invention, the release of the epitaxiallayers is accomplished by means other than PEC etching, such as laserlift off.

In another embodiment the anchors are fabricated from metal, siliconnitride or some other material resistant to the selective etch. Thisembodiment has the advantage over the partially undercut anchors in thatthe anchor is not undercut and therefore can be much smaller than theextent of lateral etching. This enables much denser patterning of diceon the substrate.

In an embodiment, laser device epitaxy material is fabricated into adense array of undercut mesas on a substrate containing device layers.This pattern pitch will be referred to as the ‘first pitch’. The firstpitch is often a design width that is suitable for fabricating each ofthe epitaxial regions on the substrate, while not large enough forcompleted laser devices, which often desire larger non-active regions orregions for contacts and the like. For example, these mesas would have afirst pitch ranging from about 5 microns to about 30 microns or to about50 microns. Each of these mesas is a ‘die’.

In an example, these die are then transferred to a carrier wafer at asecond pitch such that the second pitch on the carrier wafer is greaterthan the first pitch on the substrate. In an example, the second pitchis configured with the die to allow each die with a portion of thecarrier wafer to be a laser device, including contacts and othercomponents. For example, the second pitch would be about 100 microns toabout 200 microns or to about 300 microns but could be as large at about1-2 mm or greater in the case where a large chip is desired for ease ofhandling. For example, in the case where the carrier is used as asubmount, the second pitch should be greater than about 1 mm tofacilitate the pick and place and die-attach processes. The second diepitch allows for easy mechanical handling and room for wire bonding padspositioned in the regions of carrier wafer in-between epitaxy mesas,enabling a greater number of laser diodes to be fabricated from a givengallium and nitrogen containing substrate and overlying epitaxymaterial. Side view schematics of state of the art and die expandedlaser diodes are shown in FIG. 1 and FIGS. 2a-2b . Typical dimensionsfor laser ridge widths and the widths necessary for mechanical and wirebonding considerations are from about 1 μm to about 30 μm and from about100 μm to about 300 μm, respectively, allowing for large potentialimprovements in gallium and nitrogen containing substrate and overlyingepitaxy material usage efficiency with the current invention. Inparticular, the present invention increases utilization of substratewafers and epitaxy material through a selective area bonding process totransfer individual die of epitaxy material to a carrier wafer in such away that the die pitch is increased on the carrier wafer relative to theoriginal epitaxy wafer. The arrangement of epitaxy material allowsdevice components which do not require the presence of the expensivegallium and nitrogen containing substrate and overlying epitaxy materialoften fabricated on a gallium and nitrogen containing substrate to befabricated on the lower cost carrier wafer, allowing for more efficientutilization of the gallium and nitrogen containing substrate andoverlying epitaxy material.

In another embodiment of the invention the laser facets are produced bycleaving processes. If a suitable carrier wafer is selected it ispossible to use the carrier wafer to define cleaving planes in theepitaxy material. This could improve the yield, quality, ease, and/oraccuracy of the cleaves.

In another embodiment of the invention the laser facets are produced byetched facet processes. In the etched facet embodiment alithographically defined mirror pattern is etched into the gallium andnitrogen to form facets. The etch process could be a dry etch processselected from inductively coupled plasma etching (ICP), chemicallyassisted ion beam etching (CAIBE), or reactive ion etching (RIE) Etchedfacet process can be used in combination with the die expansion processto avoid facet formation by cleaving, potentially improved yield andfacet quality.

In another embodiment of the invention the laser die are alsocharacterized by a third pitch characterizing their spacing on thesubstrate parallel to the laser ridge. The third pitch is often a designwidth that is suitable for fabricating each of the laser die into laserdevices. For example, a substrate containing lasers with laser cavitiesabout 1 mm in length may have laser die fabricated at a third pitch ofabout 1.05 mm to about 2 mm, but preferably the third pitch is less thanabout 10% longer than the laser cavities fabricated on the laser die.

In an example, these die are then transferred to a carrier wafer at asecond and fourth pitch where the second pitch is greater than the firstpitch and the fourth pitch is greater than the third pitch. Laser facetsare produced by an etched facet process as described above. The increasein distance between the laser die due to the fourth pitch allows foreasy integration of elements in front of the laser facets while thesecond die pitch allows for easy mechanical handling and room for wirebonding pads positioned in the regions of carrier wafer in-betweenepitaxy mesas, enabling a greater number of laser diodes to befabricated from substrate and overlying epitaxy material. FIG. 18 showsa schematic of the transfer process including both a second and fourthpitch on the carrier wafer.

In another embodiment of the invention die singulation is achieved bycleaving processes which are assisted by the choice of carrier wafer.For example, if a silicon or GaAs carrier wafer is selected there willbe a system of convenient cubic cleave planes available for diesingulation by cleaving. In this embodiment there is no need for thecleaves to transfer to the epitaxy material since the die singulationwill occur in the carrier wafer material regions only.

In another embodiment of the invention bar and die singulation isachieved with a sawing process. Sawing is a well-established processused for the singulation of LEDs and other semiconductor devices. Forexample, DISCO saws can be used. DISCO's dicing saws cut semiconductorwafers (Si, GaAs, etc.), glass, ceramic, and a wide variety of othermaterials at a level of precision measured in micrometers.

In another embodiment of the invention any of the above process flowscan be used in combination with the wafer tiling. As an example, about7.5 mm by about 18 mm substrates can be tiled onto about a 2 inchcarrier wafer, allowing topside processing and selective area bonding tobe carried out on multiple epitaxy substrates in parallel for furthercost savings.

In another embodiment of the invention the substrate wafer is reclaimedafter the selective area bond steps through a re-planarization andsurface preparation procedure. The epitaxy wafer can be reused anypractical number of times.⁶

In an example, the present invention provides a method for increasingthe number of gallium and nitrogen containing laser diode devices whichcan be fabricated from a given epitaxial surface area; where the galliumand nitrogen containing epitaxial layers overlay gallium and nitrogencontaining substrates. The epitaxial material comprises of at least thefollowing layers: a sacrificial region which can be selectively etchedusing a bandgap selective PEC etch, an n-type cladding region, an activeregion comprising of at least one active layer overlying the n-typecladding region, and a p-type cladding region overlying the active layerregion. The gallium and nitrogen containing epitaxial material ispatterned into die with a first die pitch; the die from the gallium andnitrogen containing epitaxial material with a first pitch is transferredto a carrier wafer to form a second die pitch on the carrier wafer; thesecond die pitch is larger than the first die pitch.

In an example, each epitaxial die is an etched mesa with a pitch ofbetween about 1 μm and about 10 μm wide or between about 10 micron andabout 50 microns wide and between about 50 and about 3000 μm long. In anexample, the second die pitch on the carrier wafer is between about 100microns and about 200 microns or between about 200 microns and about 300microns. In an example, the second die pitch on the carrier wafer isbetween about 2 times and about 50 times larger than the die pitch onthe epitaxy wafer. In an example, semiconductor laser devices arefabricated on the carrier wafer after epitaxial transfer. In an example,the semiconductor devices contain GaN, AlN, InN, InGaN, AlGaN, InAlN,and/or InAlGaN. In an example, the gallium and nitrogen containingmaterial are grown on a polar c-plane plane, a nonpolar plane such as anm-plane or a semipolar plane such as {50-51}, {30-31}, {20-21}, {30-32},{50-5-1}, {30-3-1}, {20-2-1}, {30-3-2}, or at an offcut of theseorientations within +/−10 degrees toward a c-direction and/or ana-direction. In an example, one or multiple laser diode cavities arefabricated on each die of epitaxial material. In an example, devicecomponents, which do not require epitaxy material are placed in thespace between epitaxy die.

In another embodiment of the invention the carrier wafer is anothersemiconductor material, a metallic material, or a ceramic material. Somepotential candidates include silicon, gallium arsenide, sapphire,silicon carbide, diamond, gallium nitride, AlN, polycrystalline AlN,indium phosphide, germanium, quartz, copper, gold, silver, aluminum,stainless steel, or steel.

In common laser packages like the TO canister, the laser device isindirectly attached to the body of the package which is itself solderedor otherwise attached to a heat sink with a method providing highthermal conductivity. To prevent shorting of the laser diode to thepackage a submount is provided between the laser diode material and thepackage. The submount is a thin layer of material that is both a goodthermal conductor and electrically insulating. Submount materialsinclude aluminum nitride, sapphire (Al2O3), beryllium oxide and chemicalvapor deposited diamond which offer good thermal conductivity but lowelectrical conductivity.

In another embodiment of the invention the carrier wafer material ischosen such that it has similar thermal expansion properties togroup-III nitrides, high thermal conductivity and is available as largearea wafers compatible with standard semiconductor device fabricationprocesses. The carrier wafer is then processed with structures enablingit to also act as the submount for the laser device. In some embodimentsthe facets of laser devices may be formed by bonding the laser dice to acarrier wafer that cleaves easily. By aligning the laser dice such thatthe intended plane of the facet is coplanar with an easily cleaved planeof the single-crystal carrier wafer. Mechanical or laser scribes canthen be used, as described above, to guide and initiate the cleave inthe carrier wafer such that it is located properly with respect to thelaser die and carrier wafer patterns. Zincblende, cubic anddiamond-lattice crystals work well for cleaved carriers with severalsets of orthogonal cleavage planes (e.g. [110], [001], etc.).Singulation of the carrier wafers into individual die can beaccomplished either by sawing or cleaving. In the case of singulationusing cleaving the same cleavage planes and techniques can be used asdescribed for facet formation. This embodiment offers a number ofadvantages. By combining the functions of the carrier wafer and submountthe number of components and operations needed to build a packageddevice is reduced, thereby lowering the cost of the final laser devicesignificantly. Selection of the carrier wafer with high thermalconductivity (e.g. greater than about 150 K/mW) allows for the use offull thickness carrier wafers (e.g. > about 300 microns) with lowthermal resistance, therefore no thinning of the carrier wafer isrequired. In another embodiment of the invention bar and die singulationis achieved with a sawing process. Sawing is a well-established processused for the singulation of LEDs and other semiconductor devices.

In an example, SiC is used as both a carrier and a submount. SiC isavailable in wafer diameters up to about 150 mm from multiple vendorswith high thermal conductivities ranging from about 360-490 W/mKdepending on the crystal polytype and impurities. FIG. 12 shows aschematic of the cross section of a SiC wafer 402 used as both a carrierwafer and a submount. Before transfer of the laser device material theSiC wafer is fabricated with a bonding layer 401 for attachment to thelaser device package. The opposing face of the SiC wafer is fabricatedwith a thin, electrically insulating layer 403, electrically conductivetraces and wire-bond pads 405 and an electrically conductive bondingmedia 108. The laser device material is then transferred to the carriervia previously described processes. Electrical isolation layers 408 arefabricated on the wafer using standard lithographic processes andelectrical contacts and wire bond pads 407 are made to the top-side ofthe laser device. The electrical isolation layers are important toinsure that the laser devices are electrically isolated from the laserpackage or heat sink, which is typically grounded to the rest of thelaser system. The passivation layers can be located either between thecarrier and the epitaxial die or on the side of the carrier wafer thatis bonded to the package or heat sink. The individual dice can besingulated from the SiC wafer and packaged. SiC wafers are available inmany polytypes including the hexagonal 4H and 6H as well as the cubic3C. The high thermal conductivity of SiC allows for using commerciallyavailable SiC wafers as submounts without thinning. In some embodimentsthe insulating layer 403 is placed between the SiC substrate 402 and thebonding layer 401. This allows for the SiC wafer to be used toelectrically access the die or to act as a common electrode for many dieas shown in FIGS. 15 and 17.

In one embodiment, laser dice are transferred to a carrier wafer suchthat the distance between die is expanded in both the transverse (i.e.normal to the laser ridge direction) as well as parallel to the lasercavities. This can be achieved, as shown in FIG. 13, by spacing bondpads on the carrier wafer with larger pitches than the spacing of laserdie on the substrate. It should be noted that while technically feasibleto use cleaved facets in such a configuration, etched facets would be asimpler process to implement. This is due to the need for thetransferred die to be of finite length in all directions, such thatcleaved facets would result in the expanded area in front of the diebeing removed during the cleaving process.

In another embodiment of the invention laser dice from a plurality ofepitaxial wafers are transferred to the carrier wafer such that eachdesign width on the carrier wafer contains dice from a plurality ofepitaxial wafers. When transferring die at close spacings from multipleepitaxial wafers, it is important for the untransferred die on theepitaxial wafer to not inadvertently contact and bond to die alreadytransferred to the carrier wafer. To achieve this, die from a firstepitaxial wafer are transferred to a carrier wafer using the methodsdescribed above. A second set of bond pads are then deposited on thecarrier wafer and are made with a thickness such that the bondingsurface of the second pads is higher than the top surface of the firstset of transferred die. This is done to provide adequate clearance forbonding of the die from the second epitaxial wafer. A second substratewhich might contain die of a different color, dimensions, materials, andother such differences is then used to transfer a second set of die tothe carrier. Finally, the laser ridges are fabricated and passivationlayers are deposited followed by electrical contact layers that alloweach dice to be individually driven. The die transferred from the firstand second substrates are spaced at a pitch which is smaller than thesecond pitch of the carrier wafer. This process can be extended totransfer of die from any number of substrates, and to the transfer ofany number of laser devices per dice from each substrate.

In some embodiments, multiple epitaxial mesa dice that will correspondto one or more laser stripe regions are transferred to a single carrierwafer and placed within proximity to each other. After subsequentprocessing steps to form the laser diode regions and electrical contactregions the carrier wafer is diced into individual laser devices. Theindividual laser devices will be comprised of a plurality of epitaxialmesa regions containing laser stripe regions to form a multi-emitterlaser device. Epitaxial mesa dice regions in proximity are preferablywithin one millimeter of each other, more preferably within about 200micrometers of each other and most preferably within about 50 microns ofeach other. The die are also bonded such that when laser cavities andfacets are fabricated the optical axes of the emitted laser beams arealigned to each other to less than about 5 degrees and more preferablyless than about 1 degree and most preferably less than about 0.5degrees. This has the advantage of simplifying the optical elementsneeded to couple laser light from laser devices fabricated on theseveral laser dice into the same system elements, e.g. lenses, fiberoptic cables, etc.

In one embodiment of a multi-emitter laser device according to thisinvention, a laser bar is formed wherein the multi-emitter laser striperegions emit a substantially similar wavelength. In an example, themulti-emitter laser device may emit in the in the 350 to 450 nm range,the 450-550 nm range, the 600 to 700 nm range, the 600 to 800 nm range,the 800 to 900 nm range, the 900 to 1000 nm range, the 1000 to 1300 nmrange, or the 1300 to 1600 nm range. In the laser bar configuration thedevice will be well suited in applications where very high powers arerequired. For example, the multi-emitter laser device may be configuredto emit optical output powers of greater than 5 W, greater than 50 W,greater than 100 W, greater than 500 W, or greater than 1 kW.

FIG. 30 is a schematic cross-section of one embodiment of a high powermulti-emitter laser device according to the present invention, wheremultiple laser stripes, 103, are formed in separate adjacent transferredepitaxial mesa regions located onto the common carrier, 106. In oneexample, the multiple laser stripes are electrically connected through acommon n-metal layer, 101, and a common p-metal layer, 105, separated byan insulating layer, 104, resulting in a parallel electrical topology,wherein the laser stripe regions in adjacent epitaxial mesa regions areelectrically connected in parallel. The common carrier wafer may beelectrically conducting or electrically insulating, or an optionalinsulating layer, 108, may be applied to the carrier wafer prior to thecommon n-metal layer. Electrical connections to the metal pads of themultiple stripe laser are made through wire bonds or via detachableconnections such as pogo-pins, spring clips or the like, at one or morelocations, 107, on each of the common n-metal layer and common p-metallayers.

In an alternative embodiment, the laser stripe regions in adjacentepitaxial mesa regions are electrically connected in series. FIG. 32 isa schematic cross-section of a series connected embodiment of thepresent invention where the multiple laser stripes, 103, formed ontransferred adjacent epitaxial mesa regions located onto a commoncarrier, 106, are electrically connected in a series electricaltopology. The common carrier wafer may be electrically insulating, or anoptional insulating layer, 108, may be applied to the carrier waferprior to the common n-metal layer. Electrical connections to the metalpads of the multiple stripe laser are made through wire bonds or viadetachable connections such as pogo-pins, spring clips or the like, atone or more locations, 107, on each of the common n-metal layer andcommon p-metal layers.

FIG. 36 schematically illustrates the geometrical relationship betweenthe individual laser stripes (or epitaxial mesa dice regions) on theepitaxial wafer prior to transfer to the carrier wafer, and the desiredspacing between the multiple laser stripes (or transferred epitaxialmesa dice region) on the carrier wafer following die transfer. The pitchbetween adjacent laser stripes (or laser stripe regions) on a singlemultiple-stripe laser, Pitch 2, must be an integer multiple, N, of thepitch between adjacent laser stripes on the epitaxial wafer, Pitch 1,where N≥1. The pitch between adjacent multiple-stripe lasers (or laserdiode regions) on a common carrier wafer, Pitch 3, must be an integermultiple, M, of the pitch between adjacent laser stripes on theepitaxial wafer, Pitch 1, where M>N.

FIG. 37 is a simplified top view of a selective area bonding process andillustrates a die expansion process via selective areas bonding,resulting in a multiple-stripe laser. The original gallium and nitrogencontaining epitaxial wafer 201 has had individual die of epitaxialmaterial and release layers defined through processing. Individualepitaxial material die are labeled 202 and are spaced at pitch 1. Around carrier wafer 200 had been prepared with patterned bonding pads203. These bonding pads are spaced at pitch 2, which is an even multipleof pitch 1 such that selected sets of epitaxial die can be bonded ineach iteration of the selective area bonding process. The selective areabonding process iterations continue until all epitaxial die have beentransferred to the carrier wafer 204. The carrier wafer is thensingulated at pitch 3, resulting in a multitude of multiple-stripelasers. The gallium and nitrogen containing epitaxy substrate 201 cannow optionally be prepared for reuse.

One of the most costly and complex aspects of high power laser systemsis the optical coupling and optical elements associated with collimatingand combining the output from the emitting laser stripe regions. Aprimary advantage according to this invention is the feature of placingthe laser stripe regions formed in adjacent epitaxial mesa regions closeenough to use common optical elements or on a pitch that is compatiblewith conventional optics that are offered off the shelf at low costs.FIG. 38 schematically illustrates an embodiment wherein multiple-stripelasers 301, are spaced closely enough to enable sharing of opticalelements 302 to simplify the optical coupling of the multiple outputlaser light beams 303 and resulting in a lower implementation cost of anarray of lasers.

As an alternative example of a multi-emitter laser device example, laserdie from a red emitting AlInGaAsP laser device wafer (emitting at awavelength between 600 and 700 nm, but preferably between 620 and 670nm), a green emitting GaN laser device wafer (emitting at a wavelengthbetween 500 and 600 nm, but preferably between 510 and 550 nm) and ablue emitting GaN laser device wafer (emitting at a wavelength between400 and 500 nm, but preferably between 430 and 470 nm) could betransferred to a single carrier wafer. Laser cavities, mirrors andelectrical contacts could be processed on the die and carrier waferusing standard lithographic processes with structures similar to thosedescribed above such that laser devices on each dice are individuallyaddressable and can be driven separately. Facets would be fabricatedeither with a dry etch process (e.g. RIE, ICP or CAIBE) or by cleavingthe carrier wafer. After singulation, the resulting laser chip wouldhave an effective emitter size similar to a standard laser diode device(i.e. less than about 200 microns) and would allow for red-green-bluecolor mixing. Such an RGB laser chip would greatly simplify the designand fabrication of a laser light source for projection and displayapplications. The laser devices would all be aligned to each other andclosely spaced (i.e. within about 10-100 microns), thereby reducingfabrication cost by removing both the need to provide separate opticalelements such as lenses and to separately align all emitters with thesystem optics.

In another embodiment, multiple die from multiple epitaxial wafers aretransferred to the same carrier wafer with the laser die overlaid. FIG.43 shows a schematic of the cross section of a carrier wafer duringvarious steps in a process that achieves this. Die 502 from a firstepitaxial wafer is transferred to a carrier wafer 106 using the methodsdescribed above. Laser ridges, passivation layers 104 and ridgeelectrical contacts 105 are fabricated on the die. Subsequently bondpads 503 are deposited overlaying the ridge electrical contacts. Asecond substrate 506 which might contain die of a different color,dimensions, materials, and other such differences is then used totransfer a second set of die 507 to the carrier at the same pitch as thefirst set of die. Laser ridges, passivation layers and ridge electricalcontacts can then be fabricated on the second set of die. Subsequent diebond and laser device fabrication cycles can be carried out to produce,in effect, a multi-terminal device consisting of an arbitrary number oflaser die and devices as shown in cross section in FIG. 42.

As an example, FIG. 44 shows various ways that three dice from the sameor different substrates can be individually addressed electrically suchthat laser devices fabricated on each dice can be operatedindependently. FIGS. 44 (A) and (B) show a plan view and cross sectionof a single repeat unit on the carrier wafer, here called a “chip”.Three electrically conductive bond pads 602 are provided for bondingdice from one or more substrates. The bond pads are connectedelectrically via the conductive carrier wafer to a common electrode thatalso serves as a bond pad for soldering to a submount, heat sink orotherwise integrating into a system. Top side electrical contacts aredeposited and are extended from the laser dice to wire-bond pads 603located in an area of the chip not containing laser dice. The metaltraces and pads are isolated from the carrier wafer by an insulatinglayer 606. FIGS. 44 (C) and (D) show a similar chip where thebottom-side electrical contact is made from a conductive layer 604deposited on the front side of the chip. In this example the topsideelectrical connections and chips are isolated by insulating layers 606from each other as well as the carrier wafer and the bond pad on thebottom of the chip is only used for mounting and providing good thermalconductivity. FIGS. 26 (E) and (F) show a similar chip where the laserdice are connected to a common electrode on their bottom sides via thecarrier wafer. In this configuration electrical access to the carrierwafer is made through a top-side wire-bond pad 604 rather than throughthe bottom side of the carrier wafer.

As an example, FIG. 46 shows a similar configuration of multiple laserdice transferred to a carrier wafer. FIG. 46 (A) shows a cross sectionof one laser chip after transfer of the lase dice 801. In this examplethe laser dice are longer than the laser chips with boundaries 808 and809. Electrical contact layers 807 (shown in FIG. 46 (B)) are depositedalong with electrically insulating layers 806 intended to preventshorting of the electrical contact layers using standard lithographictechniques. A laser scriber or mechanical scribe is used as describedpreviously to produce scribe marks 810 that initiate and guide thecleave. In this figure the scribe marks are “skip scribe marks” formedwith a laser scribing tool. In other embodiments the scribes can beformed mechanically and can be formed on the back of the carrier waferusing either skip or continuous scribing. The laser chips are thencleaved into bars along the direction 808 while simultaneously formingthe front and back facets of the laser cavity. The laser chips are thensingulated along the direction 809 using cleaving, sawing, through-waferlaser scribing or some other like method.

In one embodiment, the multiple laser dice are bonded to a carrier waferconsisting of an insulating material and containing metal-filled throughvias. FIG. 45 shows a schematic of this configuration. The through viasunder the laser dice are isolated electrically from the dice by a thininsulating layer 705. Electrical contact is made via a similar set ofconductive and insulating layers deposited and patterned using standardlithographic techniques. This embodiment makes it possible to produce achip that can be attached to a package via a surface mount process,which for low power parts, where thermal considerations are not asimportant, would allow for integration of laser chips directly ontoprinted circuit boards.

In some embodiments, multiple laser die are transferred to a singlecarrier wafer and placed within close proximity to each other. Dice inclose proximity are preferably within one millimeter of each other, morepreferably within 200 micrometers of each other and most preferablywithin 50 microns of each other. The die are also bonded such that whenlaser cavities and facets are fabricated the optical axes of the emittedlaser beams are aligned to each other to less than 5 degrees and morepreferably less than 1 degree and most preferably less than 0.5 degrees.This has the advantage of simplifying the optical elements needed tocouple laser light from lase devices fabricated on the several laserdice into the same system elements, e.g. MEMS mirror arrays, fiber opticcables, etc.

As an example, laser speckle is a phenomenon that produces a spatialvariation in the brightness of a laser spot projected on a surface.Laser light is coherent, and as such when it is reflected off of a roughsurface such as a projection screen the height variation in the surfaceof the screen can lead to spatially varying constructive and destructiveinterference in the laser light. This property is not desirable insystems like laser based projectors, where images formed by directprojection of a laser light will have degraded image quality. Laserspeckle can be reduced by combining several laser devices into a singlesource. This is particularly advantageous in single mode devices wherethe spectral width of the laser is narrow. Several laser devicesemitting at similar wavelengths (i.e. wavelength differences as large as50 nm and as small as 1 nm) can be transferred to the same laser chip ona carrier wafer. Because laser die can be transferred from differentsubstrates and placed in close proximity (within 10-100 microns) on thecarrier wafer it is possible to select substrates such that thetransferred die differ in wavelength by a desired amount while retaininga laser device—the laser chip—which functions equivalently to a singlelaser emitter. For example, an RGB chip consisting of six laser diecould be fabricated. Two of the die would be lasers emitting blue lightat peak wavelengths of 440 and 450 nm. Two of the die would emit greenlight at peak wavelengths of 515 and 525 nm. Two of the die would emitred light at peak wavelengths of 645 and 655 nm. As would be obvious tosomeone skilled in the art, wavelength pairs could be chosen to varyboth the apparent color of each of the red, green and blue laser pairswhile also varying the amount of speckle reduction; and increasedseparation in wavelength leads to an increased reduction in laserspeckle.

As an example, laser die from a red emitting AlInGaAsP laser devicewafer, a green emitting GaN laser device wafer and a blue emitting GaNlaser device wafer could be transferred to a single carrier wafer. Lasercavities, mirrors and electrical contacts could be processed on the dieand carrier wafer using standard lithographic processes with structuressimilar to those described above and shown in FIGS. 40 and 41 such thatlaser devices on each dice are individually addressable and can bedriven separately. Facets would be fabricated either with a dry etchprocess (e.g. RIE, ICP or CAIBE) or by cleaving the carrier wafer. Aftersingulation, the resulting laser chip would have an effective emittersize similar to a standard laser diode device (i.e. less than 200microns) and would allow for red-green-blue color mixing. Multiple laserdie for each color could be transferred from multiple substrates,allowing for engineering of the speckle of each color. Such an RGB laserchip would greatly simplify the design and fabrication of a laser lightsource for projection and display applications. The laser devices wouldbe in close proximity (i.e. within 10-100 microns) leading to the needfor smaller optics. The laser devices would all be aligned to eachother, thereby reducing fabrication cost by removing the need toseparately align all emitters with the system optics.

An example of a red, green and blue light emitting optoelectronic deviceof this kind is shown in FIG. 40 for laser die. This RGB laser chipconsists of a carrier wafer 310, which can be composed of a number ofdifferent materials. Bonded to the carrier are three laser die 316,which each have a single laser device structure fabricated into them.The laser die are bonded to the carrier p-side down, and the bond padsform a common p-electrode 314. Electrical passivation layers (e.g.silicon dioxide, silicon nitride or the like) are deposited selectivelyusing a lithographic process and separate n-electrodes 311, 312 and 313are subsequently deposited. FIG. 40 shows a single laser chip aftersingulation, however due to the nature of the bonding process, manylaser chips can be fabricated in parallel on carrier wafers of arbitrarysize. The choice of the carrier wafer material is dependent on theapplication. In some embodiments, where optical powers for the laserdevices are low (below 100 mW), Si may be chosen as the carrier waferdue to the availability of large-diameter, low-cost Si wafers. Inembodiments where emitted power is large (e.g. greater than 1 W) and thethermal resistance of the device must be kept low to ensure highefficiencies, SiC would be an appropriate carrier wafer material due tothe high thermal conductivity of SiC.

In some embodiments, the RGB laser or SLED chip is formed by bonding theoptoelectronic die such that they partially or fully overlay oneanother. Such a configuration is shown in FIG. 41 for laser die. Herethe ridge-side electrical contact also forms part or all of the bondinglayer for the next laser die. By including passivating layers such assilicon dioxide, silicon nitride or the like current can be restrictedto flow only through the ridges. This laser chip configuration can beoperated as a multi-terminal device without current matching between thelaser devices. This configuration has the advantage of allowing for thelaser ridges to be spaced very closely in the lateral direction, andthough shown in FIG. 40 with ridges that do not overlap otherconfigurations are possible, including ones where the ridges overlay oneanother. For example, in a low power device with 2 micron wide ridgesand 5 micron tolerances on lateral alignment of the lithographicprocess, it would be possible for the emitters to span a total lateraldistance of less than 16 microns, or roughly 10% of a typical GaN laserdie. In the same low power device, with epi die thicknesses of 2 micronsand bonding layer thickness of 1 micron the vertical span of the RGBemitter would be only 8 microns total. It is unlikely that thisconfiguration would be used for a high power part as it would bedifficult to extract heat efficiently from the upper most die.

Embodiments of this invention facilitate the production of laser devicesat extremely low costs relative to traditional production methods. FIG.14 shows the process flow and material inputs for a traditional laserdiode fabrication process. A substrate is provided. A laser device isgrown epitaxially on the substrate. The wafer is then processed on boththe epitaxial, i.e. front, and back sides to produce the laser dioderidge and electrical contacts. The wafer is then thinned to facilitatecleaving. The thinning process consumes most of the substrate,converting it into slurry. The thinned wafer is then cleavedperpendicular to the laser ridges to produce front and back facets, andthe resulting linear array, or “bar”, of laser devices can then betested for quality assurance purposes and multiple bars can be stackedfor coating of facets with highly reflective or anti-reflective coatingsdepending on the application of the laser. Finally, the laser devicesare singulated from the bar and attached to a submount, which providesan electrically insulating platform for the die to sit on, allowselectrical access to the substrate side of the laser device, and whichis soldered or otherwise adhered to the laser packaging or heat sink.

In the traditional work flow, laser devices are processed on theepitaxial wafers at a density fixed not by the size of the laser ridge,but by the area of material needed to handle and electrically connect tothe device. This results in relatively high processing costs per device,as the number of devices per wafer, especially on commercially availableGaN substrates which tend to be small, is low. Moreover, aftersingulation of laser devices a serial pick and place process followed bya bonding process must be carried out twice; once to bond the laser dieto a submount and a second time to bond the submount to the laserpackage.

The improved fabrication process enabled by this invention is shown inFIG. 15. A substrate is provided, which can be either a virgin substrateor one reclaimed after previous use. The epitaxial layers are grown onthe substrate and then processed into die for transfer. Because the diecan be bonded to a carrier at a larger pitch than they are found on thesubstrate, the number of die that can be prepared on the substrate isquite large. This reduces the cost of processing per die. FIG. 16 showsthe number of devices that can be processed on substrate of variousdimensions. The ridge length is assumed to be 1 mm, and the pitchbetween ridges is varied from about 50 to about 3000 microns.Practically, the pitch cannot be much smaller than about 100-150 micronsas the die must be large enough to both handle and support wire bonds.As an example, on a 1 inch diameter substrate using a standard workflow, with die pitches on the order of about 150 microns nearly 3400devices can be made. Using this epi transfer process die pitches can beshrunk to about 50 microns or less, with die width determined by thelaser ridge width. As an example, for a 1 inch diameter substrate usingthe epi transfer work flow, with die pitches on the order of about 50microns, over 10000 die can be made per wafer. This reduces both thecost per die for process as well as the cost per die for the epitaxialprocess and substrate.

When the die are transferred to a carrier wafer a certain fraction ofdie are transferred in each bonding step. This fraction is determined bythe relative sizes of the pitch of die on the substrate (i.e. firstpitch) and the pitch on the carrier (i.e. second pitch). FIG. 17 showsseveral examples of bonding configurations for small substrates on a 100mm diameter round carrier wafer. This is one example of bondingconfigurations where the carrier wafer is not fully populated with die,though it is possible to fill the carrier more completely. For example,die from limited regions of a substrate could be bonded at the edge ofthe carrier, with the unbonded region of the substrate extending off theedge of the carrier. As another example, the carrier could be partiallypopulated with mesas, and then a second set of bond pads could bepatterned on the carrier with a larger thickness than the first set ofbond pads, thereby providing clearance to bond in the unoccupiedpositions between the original bonds.

This also has a positive benefit on the cost of processing. FIG. 18shows a table of the number of devices that can be transferred to a 100mm diameter carrier wafer. It is assumed that the die pitch on thesubstrate is about 50 microns, and the die pitch on the carrier, i.e.the second pitch, is varied. It can be seen that number of devices thatcan be processed in parallel on a 100 mm diameter carrier whentransferred from 1 inch diameter wafers is approximately 30000 when thesecond pitch is 150 microns. This is 10 times as high as the number ofdevices that can be processed on a 1 inch diameter substrate with abouta 150 micron pitch. In this example, the second pitch is about 3 timesas large as the first pitch, making it possible to make three transfersfrom the substrate to the carrier. In this example all of the die frommore than one substrate could be transferred to the carrier. In someembodiments, the second pitch is around 1 mm or larger, requiring moretransfers than positions available on the carrier. In another embodimentthe first and second pitch are such that the number of positionsavailable on the substrate to bond too are equal to the number of mesason the substrate.

Once the carrier wafer is populated with die, wafer level processing canbe used to fabricate the die into laser devices. For example, in manyembodiments the bonding media and die will have a total thickness ofless than about 10 microns, making it possible to use standardphotoresist, photoresist dispensing technology and contact andprojection lithography tools and techniques to pattern the wafers. Theaspect ratios of the features are compatible with deposition of thinfilms, such as metal and dielectric layers, using evaporators, sputterand CVD deposition tools. In some embodiments front facets could beprotected with thick dielectric layers while and epoxy is dispensedoverlaying the laser die and carrier chip, encapsulating the laserdevice and sealing it from contaminants and environmental factors thatmight degrade performance. Here, then, you would have a truly chip-scalelaser package, fabricated on a wafer level using standard semiconductormanufacturing techniques and equipment, which, once singulated from thecarrier wafer, would be ready to install in a laser light system.

Moreover, the substrate can be recycled by reconditioning the surface toan epi-ready state using a combination of one or more of lapping,polishing and chemical mechanical polishing. Substrate recycling wouldrequire removal of any variation in wafer height remaining from thetransfer process. This removal would be achieved by lapping the wafersurface with abrasive slurry. The abrasive media would be one or more ofsilica, alumina, silicon carbide or diamond. Progressively smallerparticle sizes would be used to first planarize the wafer surface andthen remove subsurface damage to the crystal induced by the initialremoval process. Initial particle sizes in the range of about 1-10microns could be used, followed by about 0.1-100 micron. The final stepwould be a chemical mechanical polish (CMP), typically comprising ofcolloidal silica suspended in an aqueous solution. The CMP step wouldrestore an “epi ready” surface typically characterized by low density ofcrystalline defects and low RMS (<about 10 nm) roughness. Final cleaningsteps may include use of a surfactant to remove residual slurry as wellas cleans to remove contaminants such as exposure to acidic solutions(for example HCl, HCl:HNO₃, HF and the like) and exposure to solvents(for example isopropanol, methanol and acetone). We estimate a substratecould be recycled more than 10 times without significant change inthickness. In some embodiments, the epitaxial layers include thickbuffers that are subsequently removed by the recycling process, therebyleaving the net thickness of the substrate unchanged.

As an example, using basic assumptions about processing and materialcosts, such as recycling substrates 10 times and availability of largearea (i.e. greater than 2 cm²) GaN substrates) it can be shown thatblue-light emitting, GaN-based laser device costs below $0.50 peroptical Watt and could be as low as $0.10 per optical Watt bytransferring die from 4.5 cm² GaN substrates to 200 mm SiC carriers.This price is highly competitive with state of the art light emittingdiodes and could enable widespread penetration of laser light sourcesinto markets currently served by LEDs such as general lighting.

In an example, the present invention discloses Integrated Low-costLaser-based Light Sources based on integrated arrays of high-efficiency,low-cost blue laser diodes and densified wavelength-convertors, whichare capable of producing source brightness levels which exceed that ofLED-based sources, while maintaining the advantages of high energyefficiency and long product lifetimes expected from solid state lightingsources. Further, lighting systems based on Integrated Low-costLaser-based Light Sources are disclosed, which provide productperformance exceeding LED-based products.

In an example, we discovered that conventional GaN-based solid statelighting sources and products are limited due to source brightness,defined as the light density per unit of solid angle. With considerationof the optical concept of etendue, it is well known that the brightnesscannot be increased in an optical assembly; hence the brightness orintensity of a lighting system is limited by the brightness of thesource. For GaN LED light sources, there is a well-known phenomenonknown as “droop” where the energy efficiency drops rapidly with anincrease in input power density. Due to the difference in carrierrecombination mechanism between LEDs (spontaneous emission) and laserdiodes (stimulated emission), this phenomenon of efficiency droop is notseen in GaN laser diodes. This is displayed in FIG. 40 where the energyconversion efficiency is schematically illustrated for GaN-based LEDsand laser diodes. It is clear that laser diodes can achievesignificantly higher conversion efficiency than LEDs when operated athigh power-density. Additionally, the light emission pattern from andLED is isotropic over the surface of the device, whereas for a laserdiode, the light is emitted from a small exit facet in a well-definedcoherent beam. The emitting area for a laser diode is several orders ofmagnitude smaller, resulting in source brightness, which is severalorders of magnitude higher than for LEDs. This advantage in sourcebrightness may be maintained through an optical system, e.g. a lightbulb or fixture, resulting in an inherent advantage for laser diodes.

In an example, a brief summary of wavelength conversion materials suchas phosphor has been provided below for LED in reference to laser diode.For LEDs, the phosphor is as large as or larger than the LED source. Forlaser diode modules, the phosphor size is independent of the die size,and may be pumped from several laser diode sources. For LEDs, thephosphor is located on or around the die. The thermal dissipation ispoor, or directly through the LED die. For laser diodes the phosphor isadjacent or remote the die, enabling it to be well heat sunk, enablinghigh input power density. For LEDs, the phosphor emits back into the LEDdie resulting in significant efficiency and cost trade-off. For laserdiode modules, the environment of the phosphor can be independentlytailored to result in high efficiency with little or no added cost.Phosphor optimization for laser diode modules can include highlytransparent, non-scattering, ceramic phosphor plates. Decreasedtemperature sensitivity can be determined by doping levels. A reflectorcan be added to the backside of a ceramic phosphor, reducing loss. Thephosphor can be shaped to increase in-coupling and reduce backreflections. Of course, there can be additional variations,modifications, and alternatives.

In an example, the present invention provides a laser-based light modulecontaining one or more low-cost laser diodes; one or more wavelengthconversion elements; and a common substrate providing electrical andthermal connections between the laser diodes and the wavelengthconversion element. In an example, the low-cost laser diodes arecomposed of epitaxial material which contains GaN, AlN, InN, InGaN,AlGaN, InAlGaN, AlInGaN, combinations thereof, and the like. In anexample, the emission wavelength of the low-cost laser diode is in therange of 200 nm and 520 nm, among others.

In an example, the preferred emission wavelength of the low-cost laserdiode is in the range of 440 nm and 460 nm. In an example, thewavelength conversion element is phosphor material. In an example, thewavelength conversion element is a phosphor, which contains garnet hostmaterial and a doping element. In an example, the wavelength conversionelement is a phosphor, which contains a yttrium aluminum garnet hostmaterial and a rare earth doping element, and others. In an example, thewavelength conversion element is a phosphor which contains a rare earthdoping element, selected from one or more of Ce, Nd, Er, Yb, Ho, Tm, Dyand Sm, combinations thereof, and the like. In an example, thewavelength conversion element is a high-density phosphor element. In anexample, the wavelength conversion element is a high-density phosphorelement with density greater than 90% of pure host crystal.

In an example, the light emitted from the one or more low-cost laserdiodes is partially converted by the wavelength conversion element. Inan example, the partially converted light emitted generated in thewavelength conversion element results in a color point, which is whitein appearance.

In an example, the color point of the white light is located on thePlanckian blackbody locus of points. In an example, the color point ofthe white light is located within du′v′ of less than 0.010 of thePlanckian blackbody locus of points. In an example, the color point ofthe white light is preferably located within du′v′ of less than 0.03 ofthe Planckian blackbody locus of points.

In an example, the common substrate is a solid material with thermalconductivity greater than 100 W/m-K. In an example, the common substrateis preferably a solid material with thermal conductivity greater than200 W/m-K. In an example, the common substrate is preferably a solidmaterial with thermal conductivity greater than 400 W/m-K. In anexample, the common substrate is preferably a solid material withelectrical insulator with electrical resistivity greater than1×10{circumflex over ( )}6 ohm-cm. In an example, the common substrateis preferably a solid material with thin film material providingelectrical 1×10{circumflex over ( )}6 ohm-cm. In an example, the commonsubstrate selected from one or more of Al2O3, AlN, SiC, BeO and diamond.In an example, the common substrate is preferably comprised ofcrystalline SiC. In an example, the common substrate is preferablycomprised of crystalline SiC with a thin film of Si3N4 deposited ontothe top surface. In an example, the common substrate contains metaltraces providing electrically conductive connections between the one ormore low-cost laser diodes. In an example, the common substrate containsmetal traces providing thermally conductive connections between the oneor more low-cost laser diodes and the common substrate.

In an example, the one or more low-cost laser diodes are attached to themetal traces on the common substrate with a solder material. In anexample, the one or more low-cost laser diodes are attached to the metaltraces on the common substrate with a solder material, preferably chosenfrom one or more of AuSn, AgCuSn, PbSn, or In.

In an example, the wavelength conversion material is attached to themetal traces on the common substrate with a solder material. In anexample, the wavelength conversion material is attached to the metaltraces on the common substrate with a solder material, preferably chosenfrom one or more of AuSn, AgCuSn, PbSn, or In.

In an example, the one or more low-cost laser diodes and the wavelengthconversion material is attached to the metal traces on the commonsubstrate with a similar solder material, preferably chosen from one ormore of AuSn, AgCuSn, PbSn, or In. In an example, two or more low-costlaser diodes are attached to the common substrate with the diodesarranged in an electrically series manner. In an example, the wavelengthconversion element contains an optically reflective material interposedbetween the wavelength conversion element and the thermally conductiveconnection to the metal traces on the common substrate.

In an example, the optically reflective material interposed between thewavelength conversion element and the thermally conductive connection tothe metal traces on the common substrate has a reflectivity value ofgreater than 50%.

In an example the optically reflective material interposed between thewavelength conversion element and the thermally conductive connection tothe metal traces on the common substrate has a reflectivity value ofgreater than 80%. In an example, the optically reflective materialinterposed between the wavelength conversion element and the thermallyconductive connection to the metal traces on the common substrate has areflectivity value of greater than 90%. In an example, the optical beamshaping elements are placed between the low-cost laser diodes and thewavelength conversion element.

In an example, the wavelength conversion element contains geometricalfeatures aligned to each of the one or more low-cost laser diodes. In anexample, the wavelength conversion element further contains an opticallyreflective material on the predominate portion of the edgesperpendicular to the common substrate and one or more low-cost laserdiodes, and where the geometrical features aligned to each of thelow-cost laser diodes does not contain an optically reflective material.In an example, the common substrate is optically transparent. In anexample, the wavelength conversion element is partially attached to thetransparent common substrate. In an example, the wavelength convertedlight is directed through the common substrate. In an example, thewavelength converter contains an optically reflective material on atleast the top surface. In an example, the one or more low-cost laserdiodes and the wavelength conversion element are contained within asealing element to reduce the exposure to the ambient environment. In anexample, the one or more low-cost laser diodes and the wavelengthconversion element are contained within a sealing element to reduce theexposure to the ambient environment.

In an example, the solid-state lighting element containing at least alaser-based light module has a beam shaping element. In an example, thebeam shaping element provides an optical beam where greater than 80% ofthe emitted light is contained within an emission angle of 30 degrees.In an example, the beam shaping element provides an optical beam wheregreater than 80% of the emitted light is preferably contained within anemission angle of 10 degrees. In an example, the form is within thecommonly accepted standard shape and size of existing MR, PAR and AR111lamps. In an example, the solid-state lighting element further containsan integrated electronic power supply to electrically energize thelaser-based light module. In an example, the solid-state lightingelement further contains an integrated electronic power supply withinput power within the commonly accepted standards. Of course, there canbe other variations, modifications, and alternatives.

As used herein, the term GaN substrate is associated with GroupIII-nitride based materials including GaN, InGaN, AlGaN, or other GroupIII containing alloys or compositions that are used as startingmaterials. Such starting materials include polar GaN substrates (i.e.,substrate where the largest area surface is nominally an (h k 1) planewherein h=k=0, and 1 is non-zero).

As used herein, the term substrate is associated with both GaNsubstrates as well as substrates on which can be grown epitaxially GaN,InGaN, AlGaN, or other Group III containing alloys or compositions thatare used as starting materials. Such substrates include SiC, sapphire,silicon and germanium, among others. Substrate may also refer tosubstrates on which can be grown epitaxially GaAs, AlAs, InAs, GaP, AlP,InP, or other like Group III containing alloys or compositions that areused as starting materials. Such substrates include GaAs, GaP, Ge andSi, among others.

As used herein, the terms carrier or carrier wafer refer to wafer towhich epitaxial device material is transferred. The carrier may becomposed of a single material and be either single crystalline orpolycrystalline. The carrier may also be a composite of multiplematerials. For example, the carrier could be a silicon wafer of standarddimensions, or it could be composed of polycrystalline AlN.

As used herein, the term submount refers to material object to which alaser device is bonded in order to facilitate packaging, bonding to aheat sink and electrical contact. The submount is separate from thesubstrate, carrier wafer and package or heat sink.

As shown, the present device can be enclosed in a suitable package. Suchpackage can include those such as in TO-38 and TO-56 headers. Othersuitable package designs and methods can also exist, such as TO-9 orflat packs where fiber optic coupling is required and even non-standardpackaging. In a specific embodiment, the present device can beimplemented in a co-packaging configuration.

In other embodiments, the present laser device can be configured in avariety of applications. Such applications include laser displays,metrology, communications, health care and surgery, informationtechnology, and others. As an example, the present laser device can beprovided in a laser display such as those described in U.S. Ser. No.12/789,303 filed May 27th, 2010, which claims priority to U.S.Provisional Nos. 61/182,105 filed May 29, 2009 and 61/182,106 filed May29, 2009, each of which is hereby incorporated by reference herein.

While the above is a full description of the specific embodiments,various modifications, alternative constructions and equivalents may beused. As an example, the packaged device can include any combination ofelements described above, as well as outside of the presentspecification. As used herein, the term “substrate” can mean the bulksubstrate or can include overlying growth structures such as a galliumand nitrogen containing epitaxial region, or functional regions such asn-type GaN, combinations, and the like. Additionally, the examplesillustrates two waveguide structures in normal configurations, there canbe variations, e.g., other angles and polarizations.

REFERENCES

1. Holder, C., Speck, J. S., DenBaars, S. P., Nakamura, S. & Feezell, D.Demonstration of Nonpolar GaN-Based Vertical-Cavity Surface-EmittingLasers. Appl. Phys. Express 5, 092104 (2012).

2. Tamboli, A. Photoelectrochemical etching of gallium nitride for highquality optical devices. (2009). athttp://adsabs.harvard.edu/abs/2009PhDT . . . 68T.

3. Yang, B. MICROMACHINING OF GaN USING PHOTOELECTROCHEMICAL ETCHING.(2005).

4. Sink, R. Cleaved-Facet Group-III Nitride Lasers. (2000). athttp://siliconphotonics.ece.ucsb.edu/sites/default/files/publications/2000Cleaved-Faced Group-III Nitride Lasers.PDF.

5. Bowers, J., Sink, R. & Denbaars, S. Method for making cleaved facetsfor lasers fabricated with gallium nitride and other noncubic materials.U.S. Pat. No. 5,985,687 (1999). athttp://www.google.com/patents?hl=en&lr=&vid=USPAT5985687&id=no8XAAAAEBAJ&oi=fnd&dq=Method+for+making+cleaved+facets+for+lasers+fabricated+with+gallium+nitride+and+other+noncubic+materials&printsec=abstract.6. Holder, C. O., Feezell, D. F., Denbaars, S. P. & Nakamura, S. Methodfor the reuse of gallium nitride epitaxial substrates. (2012).7. Hjort, K. Jour. Micromech. Microeng. 6 (1996) 370-375.

What is claimed is:
 1. A multi-emitter laser diode device, the laserdiode device comprising: a carrier chip singulated from a carrier wafer,the carrier chip being characterized by a length and a width; aplurality of epitaxial mesa dice regions transferred to the carrier chipfrom a substrate and attached to the carrier chip with a bondingmaterial at a bond region, the substrate having multiple epitaxial mesadice regions positioned at an epitaxial wafer die pitch, the epitaxialwafer die pitch being designated as a first pitch; each of the epitaxialmesa dice regions arranged on the carrier chip in a substantiallyparallel configuration and positioned at a second pitch defining thedistance between adjacent epitaxial mesa dice regions, each of theplurality of epitaxial mesa dice regions comprising epitaxial material;the epitaxial material comprising an n-type cladding region, an activeregion comprising at least one active layer overlying the n-typecladding region, and a p-type cladding region overlying the at least oneactive layer; a plurality of laser diode stripe regions formed in aridge region in a top portion of the plurality of epitaxial mesa diceregions and away from the bonding material in the bond region; each ofthe laser diode stripe regions configured with a pair of facets whereina first facet is configured on a first end of the stripe and a secondfacet is configured on the second end of the stripe region to form acavity region; and wherein a pair of the laser diode stripe regions isspaced by a third pitch from an adjacent pair of the laser diode striperegions, wherein a pair of the laser diode stripe regions form amultiple-stripe laser die, the second pitch is a first integer multiple,N, of the epitaxial wafer die pitch, and the third pitch is a secondinteger multiple, M, of the epitaxial wafer die pitch, wherein N≥1 andM>N.
 2. The device of claim 1, wherein the pair of facets are configuredfrom a cleaving process or an etching process, the etching process beingselected from inductively coupled plasma etching, chemical assisted ionbeam etching, or reactive ion beam etching.
 3. The device of claim 1,wherein the second pitch defining the distance between the adjacentepitaxial dice regions configured with laser stripes is between 10microns and 50 microns, or between 50 microns and 150 microns, orbetween 150 microns and 500 microns.
 4. The device of claim 1, whereineach multi-emitter laser device further comprising forming one or morecomponents overlying the carrier chip, the one or more components beingselected from one or more of a metal contact region, a metalinterconnect region, or a metal bonding pad.
 5. The device of claim 1,wherein at least a pair of laser diode regions formed on adjacentepitaxial mesa dice regions are electrically connected in series via ametal interconnect region or a metal contact region.
 6. The device ofclaim 1, wherein at least a pair of laser diode regions formed onadjacent epitaxial mesa dice regions are electrically connected inparallel via a metal interconnect region or a metal contact region. 7.The device of claim 1, wherein the bond region is comprised of a metal,an oxide, a glass, a soldering alloy, a polymer, or a wax.
 8. The deviceof claim 1, wherein the epitaxial material is gallium and nitrogencontaining and grown on a polar, non-polar, or semi-polar plane.
 9. Thedevice of claim 1, wherein the epitaxial material comprises at least oneof GaN, AIN, InN, InGaN, AlGaN, InAlN, InAlGaN, AlAs, GaAs, GaP, InP,AlP, AlGaAs, AlInAs, InGaAs, AlGaP , AlInP, InGaP, AlInGaP, AlInGaAs, orAlInGaAsP.
 10. The device of claim 1, wherein the carrier wafercomprises at least one of silicon carbide, aluminum nitride, diamond,sapphire, gallium arsenide, indium phosphide, silicon, beryllium oxide,gold, silver, copper, or graphite, carbon nanotubes or graphene orcomposites thereof.
 11. The device of claim 1, wherein the multi-emitterlaser diode device is configured as a laser bar.
 12. The device of claim1, wherein the substrate is a gallium and nitrogen containing substratesuch as a GaN substrate and the epitaxial material is gallium andnitrogen containing epitaxial material; wherein the multi-emitter laserdiode device emits in the 350 to 450 nm range or in the 450 to 550 nmrange.
 13. The device of claim 1, wherein the substrate is a gallium andarsenic containing substrate such as a GaAs substrate and the epitaxialmaterial is gallium and arsenic containing epitaxial material; whereinthe multi-emitter laser diode device emits in the 600 to 700 nm range,or in the 700 to 800 nm range, or in the 800 to 900 nm range, or in the900 to 1000 nm range, or in the 1000 to 1100 nm range.
 14. The device ofclaim 1, wherein the substrate is an indium and phosphorous containingsubstrate such as an InP substrate and the epitaxial material is indiumand phosphorous containing epitaxial layers; wherein the multi-emitterlaser diode device emits in the 1100 to 1300 nm range, or in the 1300 to1400 nm range, or in the 1500 to 1600 nm range.
 15. The device of claim1, wherein the multi-emitter laser diode device is configured with anoptical combiner to combine the optical output of the multi-emitters.16. The device of claim 1, wherein the multi-emitter laser diode deviceis configured with collimating optics to collimate output beams from themulti-emitters; wherein the collimating optics comprise a common fastaxis collimating lens and/or a common slow axis collimating lens tocollimate multiple emitted beams.
 17. The device of claim 1, wherein themulti-emitter laser diode device is configured with collimating opticsto collimate output beams from the multi-emitters; wherein thecollimating optics comprise a lens array.
 18. The device of claim 1,where the substrate has a thermal conductivity greater than about 150K/mW.
 19. The device of claim 1, wherein a bond pad is located on theside of the carrier opposite the bonded epitaxial material; wherein thelaser diode device comprises one or more gallium and nitrogen containingviolet or blue emitting laser diodes operable at optical output powersabove about 1 W; wherein the carrier chip resulting from the substratehas a thermal conductivity of greater than about 150 K/mW and iscomprised of one or more of silicon carbide, aluminum nitride, berylliumoxide, gold, silver, copper, or graphite, carbon nanotubes or graphemeor composites thereof; and wherein the optical output is configured toexcite a wavelength conversion material such as a phosphor material.